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    Article

    Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates

    Growth of Al x Ga1−x N layers by hydride vapor-phase epitaxy on patterned sapphire substrates is investigated. The pattern consists of honeycombs which by their o...

    E. Richter, S. Fleischmann, D. Goran, S. Hagedorn… in Journal of Electronic Materials (2014)