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    Article

    Profiling of the SiO2 - SiC Interface Using X-ray Photoelectron Spectroscopy

    The implementation of SiC based sensors and electronics for operation in chemically harsh, high temperature environments depends on understanding the SiO2/SiC interface in field effect devices. We have developed ...

    R. N. Ghosh, S. Ezhilvalavan, B. Golding in MRS Online Proceedings Library (2011)

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    Preparation and properties of tantalum pentoxide (Ta2O5) thin films for ultra large scale integrated circuits (ULSIs) application – A review

    Tantalum pentoxide (Ta2O5) thin films have rapidly evolved into an important field of research/development for both basic and applied science with the promise of creating a new generation of advanced micro device...

    S. Ezhilvalavan, T. Y. Tseng in Journal of Materials Science: Materials in Electronics (1999)

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    Article

    Dependence of non-linearity coefficients on transition metal oxide concentration in simplified compositions of ZnO+Bi2O3+MO varistor ceramics (M=Co or Mn)

    Ceramics with simplified compositions of ZnO + Bi2O3 + CoO or MnO show non-linearity coefficients (α) of 40–65 provided the concentration of transition metal ions is > 1.5mol.... Samples doped with Co have higher...

    S. Ezhilvalavan, T.R.N. Kutty in Journal of Materials Science: Materials in Electronics (1996)