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    Article

    The Effect of Physical Property Parameters of the Insulation Material Inside the Heat Shield on the Growth of Czochralski Silicon Crystal

    The main method for producing single silicon crystal is the Czochralski (CZ) method, which is widely utilized to grow high-quality, large-size semiconductor crystals. The ideal physical property parameters of ...

    Rongrong Hu, Xuekang Lv, Jiacheng Li, Salamat Ali, **g Qi in Silicon (2024)

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    Article

    Influence of Thermal Conductivity and Emissivity of Heat Shield Surface Material on the Thermal Field of Czochralski Silicon Crystal Growth

    Silicon crystal for solar cells are mainly produced by the Czochralski (CZ) method, in which the quality and production cost of silicon crystal are mainly affected by the thermal field of the crystal growth fu...

    Xuekang Lv, Rongrong Hu, Jiacheng Li, Salamat Ali, Geng** Li, **g Qi in Silicon (2024)