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  1. No Access

    Article

    Diamond Growth on (a) Large Mo Cylinders at 30 Torr and (b) Flat Mo at One Atmospheric Pressure of H2 and CH4

    (a) Polycrystalline diamond films have been grown on cylindrical Mo substrates by hot filament and microwave plasma CVD techniques using a gas mixture of hydrogen and methane. A single hot tungsten filament has b...

    R. Ramesham, M. F. Rose in MRS Online Proceedings Library (1996)

  2. No Access

    Article

    Plasma Etching and Patterning of CVD Diamond at <100° for Microelectronics Application

    Oxidation resistance of diamond is an important characteristic to be considered in many high temperature microelectronics and other applications. We have tested the stability of CVD diamong by exposing to Grou...

    R. Ramesham, W. Welch, W. C. Neely, M. F. Rose… in MRS Online Proceedings Library (1996)

  3. No Access

    Article

    AC and DC Polarization and Cyclic Voltammetric Behavior of Boron-Doped CVD Diamond in 0.5M NaCl Solution

    Boron-doped diamond has been deposited over a Mo substrate by microwave plasma CVD using methane and hydrogen. Boron do** of diamond has been achieved in situ by using a solid boron source while growing the ...

    R. Ramesham, M. F. Rose in MRS Online Proceedings Library (1996)

  4. No Access

    Article

    Adhesion and Young’s Modulus of CVD Diamond Thin Films Grown Over Various Substrates

    Diamond films were deposited by microwave plasma CVD using H2 and CH4 gas mixture over various substrate materials such as Si, Pd, Be, Cu, Mo, AIN, SiO2, Si3N4, Al2O3, Sapphire, Quartz, Ni-base alloys, single cry...

    R. Ramesham, R. F. Askew, M. F. Rose in MRS Online Proceedings Library (1995)

  5. No Access

    Article

    Effect of Oxygen on the Textured Diamond Growth over Nickel Substrates

    Microwave plasma has been used to grow diamond films using CH4 and H2 over nickel substrates. Nucleation of the diamond has been achieved by manual scratching and ultrasonic agitation of the substrates. The subst...

    R. Ramesham, M. F. Rose, R. F. Askew, M. Bozack in MRS Online Proceedings Library (1994)

  6. No Access

    Article

    Selective Growth of Polycrystalline Diamond Thin Films

    Microwave plasma assisted CVD is employed to grow diamond films using a gas mixture of H2 and CH4on various substrates. Diamond has a tendency not to nucleate growth on mirror-smooth finished substrates irrespect...

    R. Ramesham in MRS Online Proceedings Library (1992)

  7. No Access

    Article

    Selective Nucleation of Diamond Crystals on the Apex of Silicon Pyramids

    Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes patterned sharp apex of silicon pyramids surr...

    R. Ramesham, C. Ellis in MRS Online Proceedings Library (1992)

  8. No Access

    Article

    Selective growth of polycrystalline diamond thin films on a variety of substrates using selective damaging by ultrasonic agitation

    Polycrystalline diamond thin films have been selectively grown on silicon, silicon dioxide, silicon nitride, tantalum, molybdenum, alumina, and sapphire substrates using selective damaging by ultrasonic agitat...

    R. Ramesham, T. Roppel in Journal of Materials Research (1992)

  9. No Access

    Article

    Selective growth of diamond crystals on the apex of silicon pyramids

    Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes a patterned sharp apex of silicon pyramids su...

    R. Ramesham, C. Ellis in Journal of Materials Research (1992)

  10. No Access

    Article

    Selective Growth of Poly-Diamond Thin Films Using Selective Damaging by Ultrasonic Agitation on a Variety of Substrates

    Polycrystalline diamond thin films have been selectively deposited on Si, SiO2, Si3 N4, Ta, Mo, alumina, and sapphire substrates using selective damaging by ultrasonic agitation. Novel processes were developed to...

    R. Ramesham, T. Roppel, C. Ellis in MRS Online Proceedings Library (1991)

  11. Article

    Erratum: “Selective and low temperature synthesis of polycrystalline diamond”

    After this article was published in the June issue of Journal of Materials Research, one of the authors noticed that the ordinates in Figs. 9(a) through 9(g) and Fig. 11 were labeled incorrectly. In each of these...

    R. Ramesham, T. Roppel, C. Ellis, D. A. Jaworske, W. Baugh in Journal of Materials Research (1991)

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  12. No Access

    Article

    Effect of chromium and phosphorus on the physical properties of iron and titanium-based amorphous metallic alloy films

    Amorphous iron and titanium-based alloys containing various amounts of chromium, phosphorus, and boron exhibit high corrosion resistance. We report some physical properties of Fe and Ti-based metallic alloy fi...

    S. DiStefano, R. Ramesham, D. J. Fitzgerald in Journal of Materials Research (1991)

  13. No Access

    Article

    Selective and low temperature synthesis of polycrystalline diamond

    Polycrystalline diamond thin films have been deposited on single crystal silicon substrates at low temperatures (⋚ 600 °C) using a mixture of hydrogen and methane gases by high pressure microwave plasma-assist...

    R. Ramesham, T. Roppel, C. Ellis, D. A. Jaworske, W. Baugh in Journal of Materials Research (1991)

  14. No Access

    Article

    Low Temperature Synthesis of Polycrystalline Diamond by Microwave Plasma-Enhanced Chemical Vapor Deposition

    Polycrystalline diamond thin films have been deposited on single crystal silicon substrates at low temperatures (<950°C) using a mixture of methane and hydrogen gases by high pressure microwave plasma assisted...

    R. Ramesham, C. Ellis, T. Roppel, D.A. Jaworske, W. Baugh in MRS Online Proceedings Library (1990)