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    Chapter and Conference Paper

    Oxidation Studies for 6H-SiC

    Polytype 6H silicon carbide samples having polar faces terminated with either carbon (000 \(\bar 1\) ) or silicon (0001) have been oxidized at 810°C for varying times using a microwa...

    C. S. Patuwathavithane, J. B. Crofton… in Amorphous and Crystalline Silicon Carbide … (1992)