100 Result(s)
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Chapter and Conference Paper
A Model for Analysis of Optical Measurements Carried on a-Si:H Films for Photovoltaic Applications
— A set of absorptance measurements have been performed on doped and undoped a-Si:H films prepared by r.f. glow discharge at different deposition conditions. In previous work123 we observed the role of the bias o...
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Chapter and Conference Paper
Precursor of Alzheimer’s Disease (PAD) A4 Amyloid Protein
Alzheimer’s disease affects 1% of the population of the Western world and 100% of aged individuals with Down’s syndrome. It is characterized by neuronal dysfunction and depositions of. amyloid A4 protein (β-pr...
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Chapter and Conference Paper
The Molecular Basis of Cerebral Amyloidosis in Alzheimer’s Disease and the Unconventional Virus Diseases
The major protein subunit of the amyloid fibril in Alzheimer’s disease is a small molecule of 42 residues (termed A4). It is derived from a larger precursor (PreA4), the gene for which is located on chromosome...
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Article
Haematological changes in retinal vasculitis
Two selected cases of retinal vasculitis, apparently of unknown aetiology, are reported; one case without any systemic or laboratory manifestation and the second case with a clinical picture similar to VKH syn...
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Article
On the Properties of Weakly Absorbing Highly Conductive SiC Thin Films Prepared in a TCDDC System
p- and n-type weakly absorbing highly conductive (σ>0.1(Ωcm)-1) SiC thin films with similar structural and optoelectronic properties have been prepared in a TCDDC reactor. These films contain Si microcrystals ...
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Article
Plasma Diagnostic of a TCDDC System Using a Quadropole Mass Spectrometer
Species formed during the decomposition of silane-methane-hydrogen mixtures ([SiH4]x:[CH4]y:[H2]z), by spatial plasma separation technique using the TCDDC (Two Consecutive Decomposition and Deposition Chambre) sy...
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Article
Determination of a-Si:H Film Quality Throughfst and Sclc Techniques
The ambipolar diffusion length (L*) and the effective lifetime (τ*) in undoped a-Si:H films have been measured by the Flying Spot Technique (FST). This technique consists in measuring the decay range of charge...
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Article
The Role of the Species Formed in Pecvd Systems on the Density of States of a-Si:H Films
Here the species detected by a quadropole mass analyser and resulting from the decomposition of SiH4 induced by a plasma [using a diode-like PECVD (Plasma Enhanced Chemical Vapour Deposition) system, in which has...
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Chapter and Conference Paper
Multi-Purpose PV Plant in Lisbon, Portugal
A 15.6 kWp PV plant with a variety of different consumer types and a novel load management scheme is described. It is designed to be able to operate in several stand-alone configurations and grid connected mode. ...
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Chapter and Conference Paper
The Role of the Reduction of ITO on the Electrical Properties of the p-i Junction: A Thin SiO Layer as a Remedy
The reduction of the ITO by the deposition of an a-Si:C:H p layer by means of a Plasma Enhanced Chemical Vapour Deposition (PECVD), is considerably diminished if a thin silicon monoxide layer (estimated to be ...
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Chapter and Conference Paper
Influence of the RF Power Density on the Electrical Properties of Glow-Discharge Amorphous Silicon
The optimization of the devices efficiency and their costs is an important request to promote the application of amorphous silicon thin films devices on industry. In this perspective, it is interesting to try ...
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Chapter and Conference Paper
Photoinduced Effects in Hydrogenated Amorphous Silicon
Photoinduced effects observed in ITO/a-Si:H/ITO structures are studied through the analysis of the J-V curves, in order to determine the role of interface in the structure performances. At the dark, the J-V cu...
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Chapter and Conference Paper
A-Si:H Ambipolar Diffusion Length and Effective Lifetime Measured by Flying Spot Technique (FST)
The determination of the ambipolar diffusion length, L*, and the effective lifetime, τ*, in p/i and a-Si:H Schottky barriers (ITO/p/a-Si:H/Al-Si; Cr/a-Si:H/Cr/Ag) have been determined by Flying Spot Technique,...
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Chapter
Principles of Rockfill Hydraulics
What should be understood by the term “rockfill hydraulics”?Obviously it is necessary to begin by defining “rockfill”. There is not, as is known, any single definition. It varies from author to author, varies ...
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Article
Role of Sio at TCO/P Interface on the Electrical Properties of the P/I Junction
The reduction of the ITO (Indium Tin Oxide) by the deposition of an a-Si:C:H p layer by means of a Plasma Enhanced Chemical Vapour Deposition (PECVD), is considerably diminished if a thin silicon monoxide laye...
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Article
A-Si:H Ambipolar Diffusion Length and Effective Lifetime Measured by Flying Spot Technique (FST)
The determination of the ambipolar diffusion length, L*, and the effective lifetime, τ*, in p/i and a-Si:H Schottky barriers (ITO/p/a-Si:H/Al-Si; Cr/a-Si:H/Cr/Ag) have been determined by Flying Spot Technique, FS...
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Article
Engineering of PECVD Systems for Macroelectronic Applications
The materials quality (uniformity and homogeneity) produced by PECVD technique depends on the plasma behaviour. Problems related to the gas dissociation ratio and powder formation are responsible for materials...
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Article
Transient Versus Steady State Measurements on the Transport Properties of a-SI:H Films
Transient and steady-state measurements of the ambipolar diffusion length (L⋆) in undoped a-Si:H films have been carried out through Flying Spot Technique (FST) and Spectral Photovoltage Technique (SPT) using ...
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Article
Role Of Photodegradation on the μτ Product and Microstructure of the a-Si:H Pin Devices
PIN solar cells were light soaked up to 60 hours. The cell characteristics, the optoelectronic properties and the microstructure parameter (R=I2100/I2100+I2000) as well as the hydrogen content (CH) and density of...
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Article
Large Area Position Sensitive Detector Based on Amorphous Silicon Technology
We have developed a rectangular dual-axis large area Position Sensitive Detector (PSD), with 5 cm × 5 cm detection area, based on PIN hydrogenated amorphous silicon (a-Si:H) technology, produced by Plasma Enha...