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    Influence of Si3N4 passivation on surface trap** in SiC metal-semiconductor field-effect transistors

    The SiC metal-semiconductor field-effect transistors (MESFETs) have been reported to have current instability and strong dispersion caused by trap** phenomena at the surface and in the substrate, which degra...

    Ho-Young Cha, Y. C. Choi, R. M. Thompson, V. Kaper… in Journal of Electronic Materials (2004)