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    Article

    Analysis of the Forming of Interlock Textile Composites Using a Hypoelastic Approach

    Numerical simulation of the textile composites forming plays an important role in improving the manufacturing quality, reducing the manufacturing cycle, and manufacturing cost. The focus is on the sha** of o...

    B. Chen, P. Boisse, J. Colmars, N. Naouar, R. Bai in Applied Composite Materials (2022)

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    Virtual Field Characterization for Ratcheting Effect Under Cyclic Loading

    Ratcheting is an important mechanical behavior of metals and alloys, which is caused by the repeated accumulations of tensile and compressive strain in circle load. However, the current characterization method...

    H. Jiang, Z. Lei, R. Bai, J. Liu, Z. Guo, H. Dong, W. Feng in Experimental Mechanics (2021)

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    The Need to Use Generalized Continuum Mechanics to Model 3D Textile Composite Forming

    3D textile composite reinforcements can generally be modelled as continuum media. It is shown that the classical continuum mechanics of Cauchy is insufficient to depict the mechanical behavior of textile mater...

    P. Boisse, R. Bai, J. Colmars, N. Hamila, B. Liang, A. Madeo in Applied Composite Materials (2018)

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    Article

    Atomistic Studies of Generic Tilt Grain Boundary Structures

    We investigate the atomic-scale structures of high-sigma (∑) tilt grain boundaries in aluminum using lattice statics calculations. In particular, we examine the efficacy of the structural unit model (SUM) in t...

    D. N. Pawaskar, R. Miller, R. Bai, A. Schwartzman in MRS Online Proceedings Library (1998)

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    Investigation of the annealing texture evolution in hafnium

    This article presents a study of the evolution of the annealing texture in hafnium, as measured by electron backscattering diffraction patterns (EBSPs). It was found that the annealing texture of asreceived ex...

    R. Bai, C. L. Briant, D. C. Paine in Metallurgical and Materials Transactions A (1998)

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    Article

    Epitaxial Growth of GaN on Lattice-Matched Hafnium Substrates

    A method of producing epitaxial GaN on single-crystal Hf has been developed. The metal substrate is formed by a strain-anneal process yielding macroscopic (5-mm) grain sizes, followed by polishing, chemical et...

    R. Beresford, K.S. Stevens, C. Briant, R. Bai, D.C. Paine in MRS Online Proceedings Library (1995)