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  1. No Access

    Article

    2D Modeling of the Annealing Process After Ion Implantation in n-on-p HgCdTe

    A 2D model for the annealing process after ion implantation in HgCdTe was established. The 2D model was based on the diffusion equations of Hg vacancy and interstitial. Generation and annihilation of the Hg va...

    Zhikai Gan, Yu Zhao, Chun Lin, Quanzhi Sun, Songmin Zhou… in Journal of Electronic Materials (2023)

  2. No Access

    Article

    Effect of Lattice Mismatch on HgCdTe LPE Film Surface Morphology

    A new type of crystal defect, which we call a rough structure, is reported in this work. The rough structure appears in large lattice mismatch regions whereas a normal surface appears in the regions where ther...

    Quanzhi Sun, Yanfeng Wei, Juan Zhang, Ruiyun Sun in Journal of Electronic Materials (2016)

  3. No Access

    Article

    Characteristics of Au Migration and Concentration Distributions in Au-Doped HgCdTe LPE Materials

    Annealing techniques and secondary ion mass spectrometry have been used to study the characteristics of Au migration and concentration distributions in HgCdTe materials grown by liquid phase epitaxy. Secondary...

    Quanzhi Sun, Jianrong Yang, Yanfeng Wei, Juan Zhang… in Journal of Electronic Materials (2015)