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Article
Open AccessEffect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
VO2 thin films were grown on silicon substrates using Al2O3 thin films as the buffer layers. Compared with direct deposition on silicon, VO2 thin films deposited on Al2O3 buffer layers experience a significant im...
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Article
Open AccessInfrared Properties and Terahertz Wave Modulation of Graphene/MnZn Ferrite/p-Si Heterojunctions
MnZn ferrite thin films were deposited on p-Si substrate and used as the dielectric layer in the graphene field effect transistor for infrared and terahertz device applications. The conditions for MnZn ferrite...
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Article
Open AccessA Facile Method for Loading CeO2 Nanoparticles on Anodic TiO2 Nanotube Arrays
In this paper, a facile method was proposed to load CeO2 nanoparticles (NPs) on anodic TiO2 nanotube (NT) arrays, which leads to a formation of CeO2/TiO2 heterojunctions. Highly ordered anatase phase TiO2 NT arra...
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Article
Open AccessIn-situ growth of MAX phase coatings on carbonised wood and their terahertz shielding properties
Electromagnetic interference (EMI) shielding materials have received considerable attention in recent years. The EMI shielding effectiveness (SE) of materials depends on not only their composition but also the...
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Article
High Dielectric Constant YIG Ferrites with Low Sintering Temperature
Yttrium-Iron-Garnet (YIG) ferrites are widely used in microwave communication systems due to its excellent gyromagnetic properties. However, these YIG materials were normally synthesized under a high sintering...
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Article
Co2Z hexaferrites with equivalent permeability and permittivity in UHF band
With the development of modern communication technology, all kinds of wireless communication devices are develo** rapidly toward miniaturization, lightweight, and integration, which puts forward higher requi...
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Article
Open AccessHigh-temperature stability in air of Ti3C2Tx MXene-based composite with extracted bentonite
Although Ti3C2Tx MXene is a promising material for many applications such as catalysis, energy storage, electromagnetic interference shielding due to its metallic conductivity and high processability, it’s poor r...
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Article
Ultrathin MXene assemblies approach the intrinsic absorption limit in the 0.5–10 THz band
Broadband and efficient terahertz absorbing films are crucial to high-performance terahertz detectors, which are in demand for next-generation wireless communications, astronomy, security screening, medical im...
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Article
Open AccessOrganohydrogel-based transparent terahertz absorber via ionic conduction loss
The fast-growing terahertz technologies require high-performance terahertz absorber for suppressing electromagnetic interference. Since the dissipation mechanism in terahertz band usually focuses on electronic...
