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  1. No Access

    Chapter

    Compensation of GaAs by Oxygen Implantation

    Oxygen implantations are found to produce semi-insulating layers, buried or not, according to the energy and the dose, and temperature resistant, up to 800°C. These semi-insulating layers are attributed to dop...

    P. N. Favennec, G. P. Pelous, M. Binet… in Ion Implantation in Semiconductors and Oth… (1973)

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    Article

    Saramycetoic acid and its lactam saramycetic acid A

    P. Baudet, Cl. Otten in Naturwissenschaften (1968)