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  1. No Access

    Article

    Structural and Chemical Features of Silicon Nanocrystallites in Nanocrystalline Hydrogenated Silicon Thin Films

    Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited on Si wafers at room temperature by plasma-enhanced chemical vapor deposition (PECVD): a mixture of SiH4 and H2 was introduced into the eva...

    J.-H. Shim, N.-H. Cho in Glass Physics and Chemistry (2005)

  2. No Access

    Article

    Formation, faceting, and interaction behaviors of antiphase boundaries in GaAs thin films

    Antiphase boundaries occur in GaAs epilayers grown on (001) Ge substrates by organometallic vapor-phase epitaxy methods. The formation and structural characteristics of these boundaries were investigated by tr...

    N.-H. Cho, C. B. Carter in Journal of Materials Science (2001)

  3. No Access

    Article

    Structural features of Σ = 19, [110] GaAs tilt grain boundaries

    Σ = 19, [110] tilt grain boundaries have been observed to facet parallel to particular planes; the facets lie along $${\left\langle {...

    N.-H. Cho, C. B. Carter in Journal of Materials Science (2001)

  4. No Access

    Article

    Structural and Optical Features of Nano-Crystalline Silicon Films Prepared by PECVD and RF Magnetron Sputter Techniques

    Nano-crystalline Si films were prepared by plasma enhanced chemical vapor deposition (PECVD) and rf-magnetron sputter techniques at various deposition conditions, and the relations of the photoluminescence (PL...

    M. B. Park, N. H. Cho in MRS Online Proceedings Library (2000)

  5. No Access

    Article

    Microstructure and Electrical Characteristics of La1−xSrxMnO3 (0.19≤x≤0.31) Thin Films Prepared by Sputter Techniques

    La1−x SrxMnO3(0.19≤x≤0.31) thin films were prepared on silicon wafers by sputter techniques. The effect of substrate temperature, chemical composition and post-deposition heat-treatment on the crystalline structu...

    H. Heo, S. J. Lim, G. Y. Sung, N. H. Cho in MRS Online Proceedings Library (1999)

  6. No Access

    Article

    Phase formation, sintering behavior, and electrical characteristics of NASICON compounds

    The dependence of phase formation, sintering behavior, and electrical characteristics of Sodium Superionic Conductor (NASICON) compounds on sintering temperature, time, and cooling process was investigated. In...

    Hee-Bog Kang, N.-H. Cho in Journal of Materials Science (1999)

  7. No Access

    Article

    Optical and mechanical properties of dc sputtered carbon films

    Amorphous carbon films were deposited on glass by dc magnetron sputtering from a graphite target in mixtures of argon and hydrogen. Hydrogen flow and other deposition parameters affected the optical and mechan...

    M. Rubin, C. B. Hopper, N. H. Cho, B. Bhushan in Journal of Materials Research (1990)

  8. No Access

    Article

    Chemical structure and physical properties of diamond-like amorphous carbon films prepared by magnetron sputtering

    Thin films of amorphous carbon (–C) and amorphous hydrogenated carbon (a–C: H) were prepared using magnetron sputtering of a graphite target. The chemical structures of the films were characterized using electron...

    N. H. Cho, K. M. Krishnan, D. K. Veirs, M. D. Rubin… in Journal of Materials Research (1990)

  9. No Access

    Article

    Power Density Effects in the Physical and Chemical Properties of Sputiered Diamond-Like Carbon thin Films

    Thin films of diamond-like amorphous carbon were prepared by dc magnetron sputtering. A systematic variation in the physical properties of the films (mass density and electrical resistivity) was found as a fun...

    N.-H. Cho, K. M. Krishnan, D. K. Veirs, M. D. Rubin… in MRS Online Proceedings Library (1989)

  10. No Access

    Article

    The Study of Interfaces in Gaas

    The structure of the ∑=19, ( \(\overline 3 31\) )/( $3\overlin...

    N. H. Cho, D. R. Rasmussen, S. Mckernan, C. B. Carter… in MRS Online Proceedings Library (1988)

  11. No Access

    Article

    Characterization of Dislocations in GaAs Grown on Si and Ge

    Dislocations are produced at the interface between epilayers and the substrate when there is a lattice mismatch. When GaAs is grown on Ge substrates, these dislocations can propagate into the epilayers. They c...

    N.-H. Cho, S. Mckernan, C. B. Carter, B. C. De Cooman… in MRS Online Proceedings Library (1987)

  12. No Access

    Article

    Characterization of APBs in GaAs Grown on Si and Ge

    Antiphase boundaries are observed in epilayers of GaAs grown by organometallic vapor phase epitaxy on Ge substrates and are then invariably found to show a tendency to facet. Stacking-fault-like fringes caused...

    C. B. Carter, N.-H. Cho, S. Mckernan, D. K. Wagner in MRS Online Proceedings Library (1987)

  13. No Access

    Article

    Interface Defects in GaAs and GaAs-AlxGa1-xAs Grown on Ge

    Σ=3 lateral twin boundaries and a Σ=19 boundary have been investigated by highresolution electron microscopy. The lateral twin boundary was produced by growth on single crystal (110) Ge substrate and was obser...

    N.-H. Cho, S. McKernan, D.K. Wagner, C.B. Carter in MRS Online Proceedings Library (1987)

  14. No Access

    Article

    Defects in GaAs Grown on Ge Substrates

    The growth of polar semiconducting materials on non-polar semiconducting substrates is illustrated by experimental observations of GaAs grown on Ge substrates and on Ge epilayers which had been grown on Si sub...

    C. B. Carter, B. C. De Cooman, N. H. Cho, R. M. Fletcher… in MRS Online Proceedings Library (1985)