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Article
A new structure of electrically doped TFET for improving electronic characteristics
This article put forward a novel device structure of electrically doped tunnel field effect transistor to improve DC and RF performance with suppressed ambipolarity and gate leakage. For suppressing gate leaka...
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Article
A new design approach for enhancement of DC/RF characteristics with improved ambipolar conduction of charge plasma TFET: proposal, and optimization
This article presents a new device structure to suppress ambipolarity with enhanced electrostatic characteristics of charge plasma TFET (CP-TFET). Here, implantation of a metal angle (MA) of low workfunction i...
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Article
A novel approach for the improvement of electrostatic behaviour of physically doped TFET using plasma formation and shortening of gate electrode with hetero-gate dielectric
This article presents a new device configuration to enhance current drivability and suppress negative conduction (ambipolar conduction) with improved RF characteristics of physically doped TFET. Here, we used ...