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    Article

    Comparisons of Gallium Nitride and Indium Nitride Properties after CF4 / Argon Reactive Ion Etching

    We present a comparative study of the effects of low power reactive ion etching (RIE) on GaN and InN. This new, highly chemical, dry etching, using CF4 and Ar, has been developed for thin nitride films grown at l...

    Marie Wintrebert-Fouquet, K. Scott, A. Butcher… in MRS Online Proceedings Library (2011)

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    Article

    High Mobility Nitrides

    The highest mobility nitrides ever grown were indium nitride polycrystalline thin films. The original reactive ion sputtering unit used to produce those films is still in existence and has been substantially u...

    K. Scott, A. Butcher, Marie Wintrebert-Fouquet… in MRS Online Proceedings Library (2001)