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RBS Lattice Site Location and Damage Recovery Studies In GaN

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    RBS Lattice Site Location and Damage Recovery Studies in GaN

    Erbium was implanted with 160 keV at doses between 5×1014 and 5×1015 at/cm2 into (0001) epitaxial GaN on sapphire and annealed at various temperatures between 600° and 1000° C. The RBS/Channeling technique was us...

    E. Alves, M.F. DaSilva, J.C. Soares… in MRS Internet Journal of Nitride Semiconduc… (1999)

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