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    Ka/Q band GaAs IMPATT amplifier technology

    GaAs IMPATT diodes are capable of generating 2 to 3 W simultaneously with 18–22% efficiency in the 33 GHz to 46 GHz frequency band. The design of the amplifier circuits which utilize these devices is discussed...

    G. Jerinic, J. Fines, M. Cobb, M. Schindler in International Journal of Infrared and Mill… (1985)