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Article
Investigation of Local Structures Around Mn Atoms in In1-xMnxAs Diluted Magnetic Semiconductors Using Exafs
Extended x-ray absorption fine structure (EXAFS) techniques have been used to investigate the local structures in Inl-xMnxAs films grown by molecular beam epitaxy (MBE) under different processing conditions. For ...
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Article
Formation of Mn-As Centers in In1−xMnx as Diluted Magnetic Semiconductors
XAFS spectra at the Mn K-edge were obtained for films of In1−xMnxAs (0.0014 ≤ x ≤ 0.12) grown by MBE method at two different substrate temperatures Ts = 200–210 °C and Ts = 280–300 °C. It has been found that Mn-A...
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Article
High Pressure Optical Studies of GaSb-AlSb Multiple Quantum Wells
The pressure coefficients (α) of the excitonic transitions arising from the conduction (CB) to the heavy (HH) and light (LH) hole sub-bands of a GaSb-AlSb multiple quantum well structure (MQW) grown on a GaAs ...
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Chapter
Resonance Raman Scattering in [111]-Oriented CdTe/CdMnTe Superlattices
Cd1-xMnxTe alloys can be grown in zinc-blende structure up to a composition of х~0.7. The band gap of these crystals can be continuously tuned increasing the Mn composition.1 The difference between the band gaps ...
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Article
Studies of an InAs/GaAs Heterojunction by Total-Electron-Yield
Total electron yield (TEY) of an InAs/GaAs heterojunction due to soft x-ray excitation has been studied. This heterojunction was prepared by an overgrowth of a 600 Å InAs layer on a GaAs substrate using molecu...
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Article
Characterization of Interfacial Roughness in Semiconductor Heterostructures by X-Ray Reflectivity
The reflection of monochromatic x-rays by a layered heterostructure can be utilized as a nondestructive probe to obtain information on the interfacial roughness in the material. Interference between x-rays ref...
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Article
Semiconductor Quantum-Well Heterostructures
Activities in semiconductor heterostructures are reviewed, with focus on the fundamental physics aspects in the quantum regime and with emphasis on recent experimental observations. The GaAs-GaAlAs is used to ...