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  1. No Access

    Chapter

    Electronic Properties of Semiconductor Heterostructures in a Magnetic Field

    This work is devoted to the electronic properties of semiconductor heterostructures under the application of a magnetic field. The focus is on the quantum regime where the heterostructure potential results in ...

    L. L. Chang in Molecular Beam Epitaxy and Heterostructures (1985)

  2. No Access

    Article

    Semiconductor Quantum-Well Heterostructures

    Activities in semiconductor heterostructures are reviewed, with focus on the fundamental physics aspects in the quantum regime and with emphasis on recent experimental observations. The GaAs-GaAlAs is used to ...

    L. L. Chang in MRS Online Proceedings Library (1985)

  3. No Access

    Article

    Characterization of Interfacial Roughness in Semiconductor Heterostructures by X-Ray Reflectivity

    The reflection of monochromatic x-rays by a layered heterostructure can be utilized as a nondestructive probe to obtain information on the interfacial roughness in the material. Interference between x-rays ref...

    A. Krol, C. J. Sher, H. Resat, S. C. Woronick, W. Ng… in MRS Online Proceedings Library (1987)

  4. No Access

    Article

    Studies of an InAs/GaAs Heterojunction by Total-Electron-Yield

    Total electron yield (TEY) of an InAs/GaAs heterojunction due to soft x-ray excitation has been studied. This heterojunction was prepared by an overgrowth of a 600 Å InAs layer on a GaAs substrate using molecu...

    A. Krol, C. J. Sher, D. R. Storch, S. C. Woronick… in MRS Online Proceedings Library (1988)

  5. No Access

    Article

    High Pressure Optical Studies of GaSb-AlSb Multiple Quantum Wells

    The pressure coefficients (α) of the excitonic transitions arising from the conduction (CB) to the heavy (HH) and light (LH) hole sub-bands of a GaSb-AlSb multiple quantum well structure (MQW) grown on a GaAs ...

    Benjamin Rockwell, H.R. Chandrasekhar… in MRS Online Proceedings Library (1989)

  6. No Access

    Article

    Formation of Mn-As Centers in In1−xMnx as Diluted Magnetic Semiconductors

    XAFS spectra at the Mn K-edge were obtained for films of In1−xMnxAs (0.0014 ≤ x ≤ 0.12) grown by MBE method at two different substrate temperatures Ts = 200–210 °C and Ts = 280–300 °C. It has been found that Mn-A...

    A. Krol, Y. L. Soo, Z. H. Ming, Y. H. Kao, H. Munekata… in MRS Online Proceedings Library (1992)

  7. No Access

    Article

    Investigation of Local Structures Around Mn Atoms in In1-xMnxAs Diluted Magnetic Semiconductors Using Exafs

    Extended x-ray absorption fine structure (EXAFS) techniques have been used to investigate the local structures in Inl-xMnxAs films grown by molecular beam epitaxy (MBE) under different processing conditions. For ...

    Y. L. Soo, S. W. Huang, Z. H. Ming, Y. H. Kao… in MRS Online Proceedings Library (1994)