3 Result(s)
within
K. Murawski
Electronics and Microelectronics, Instrumentation
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Article
Open AccessAnalysis of Temperature-Dependent Photoluminescence Spectra in Mid-Wavelength Infrared InAs/InAsSb Type-II Superlattice
Photoluminescence (PL) is one of the commonly used methods to determine the energy gap ( \({E}_{\mathrm{g}}\) ...
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Article
Open AccessPhotoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm
A HgCdTe photodiode grown by chemical vapor deposition (MOCVD) on a GaAs substrate operating in the long-wave infrared (LWIR) range was characterized using photoluminescence (PL) measurements. At high temperat...
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Article
Open AccessDLTS Study of Defects in HgCdTe Heterostructure Photodiode
Deep-level transient spectroscopy (DLTS) measurements were performed on HgCdTe heterostructure photodiode grown by metal-organic chemical vapor deposition (MOCVD) on GaAs substrate. In order to extract defects...
