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    Chapter

    Study of the Raman Active Modes for the Suzuki Phase in Doped Alkali Halides

    Raman spectroscopy is shown to be an appropriate tool to characterise the Suzuki phase of doped alkali halides. Good agreement is found between our experimental data for 6NaCl:MnCl2, 6NaCl:CdCl2 and 6NaCl:MgCl2 a...

    J. M. Calleja, F. Flores, V. R. Velasco in Recent Developments in Condensed Matter Ph… (1981)

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    Chapter and Conference Paper

    Resonant Raman Scattering in GaSb-AlSb Superlattices

    The electronic properties of GaSb-AlSb superlattices (SL) have been recently analyzed by different experimental techniques showing unambiguously the formation of electronic subbands at the Γ-point 1-2. To our kno...

    C. Tejedor, J. M. Calleja, F. Meseguer in Proceedings of the 17th International Conf… (1985)

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    Chapter and Conference Paper

    Spectroscopic Raman Study of Trifluoroperovskites of Ammonium Under High Pressure

    The compounds NH4MF3 (M= Mg, Zn, Co, Mn, Cd) have the cubic perovskite structure at high temperature, distorting to quasi-tetragonal symmetry at lower temperatures (fig. 1). In a previous communication /1/, some ...

    E. Palacios, J. Bartolomé, F. Agulló-Rueda in Quantum Aspects of Molecular Motions in So… (1987)

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    Chapter

    Resonance Raman Scattering in [111]-Oriented CdTe/CdMnTe Superlattices

    Cd1-xMnxTe alloys can be grown in zinc-blende structure up to a composition of х~0.7. The band gap of these crystals can be continuously tuned increasing the Mn composition.1 The difference between the band gaps ...

    L. Vina, L. L. Chang, M. Hong, J. Yoshino in Growth and Optical Properties of Wide-Gap … (1989)

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    Chapter

    Magneto-Optics of [111] GaAs/GaAlAs Quantum Wells

    The electronic and optical properties of GaAs/GaAlAs quantum wells (QWs) have been profusely studied in the last twenty years, since its concept was introduced by Esaki and Tsu[l]. Their optical properties are...

    L. Viña, F. Calle, C. López, J. M. Calleja in Condensed Systems of Low Dimensionality (1991)

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    Chapter

    Raman Scattering Study of CdTe/CdMnTe Superlattices

    Resonant Raman scattering (RRS) by LO phonons is an optical method which provides information on the relationship between lattice-dynamical and electronic properties of crystals. A resonant enhancement of the ...

    L. Viña, F. Calle, J. M. Calleja in Light Scattering in Semiconductor Structur… (1991)

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    Chapter

    Resonant Raman Scattering in GaAs-AlAs Multiquantum Wells Under Magnetic Fields

    Resonant Raman Scattering (RRS) in semiconductor superlattices (SL) and multiquantum wells (MQW) has been extensively studied in recent years in order to obtain information on different aspects of their electr...

    J. M. Calleja, F. Meseguer, F. Calle in Light Scattering in Semiconductor Structur… (1991)

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    Chapter

    Inelastic Light Scattering by Free Electrons in GaAs Quantum Wires

    We review recent inelastic light scattering studies of elementary excitations of the one-dimensional (1D) electron gas in the quantum limit, when only one or two 1D subbands are occupied by electrons. The ligh...

    A. R. Goñi, A. Pinczuk, J. S. Weiner in Phonons in Semiconductor Nanostructures (1993)

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    Chapter

    Optical Properties of Semiconductor Quantum Well Wires

    Modulation doped quantum well wires have been fabricated in the one-dimensional (ID) quantum limit, where only the first ID band is occupied. Novel properties have been found in the optical spectra. Strong Fer...

    J.M. Calleja, A. R. Goñi, J. S. Weiner in Optical Phenomena in Semiconductor Structu… (1993)

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    Chapter

    Hot Exciton Luminescence in Quantum Wells as a Spectroscopic Tool

    Hot carrier effects are the subject of much interest in the study of transport properties in semiconductor heterostructures because of their importance in device reliability. The present work is devoted to som...

    F. Calle, C. López, F. Meseguer, L. Viña in Negative Differential Resistance and Insta… (1993)

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    Chapter

    Double Raman Resonances in Semiconductor Multiquantum Wells Induced by High Magnetic Fields

    Raman resonance profiles have been measured in GaAs/AlAs multiple-quantum wells (MQW) under magnetic fields up to 20T both for (100) and (111) crystal orientations. The intensity of the resonance increases by ...

    J. M. Calleja, L. Viña, T. Berendschot, F. Calle in Phonons in Semiconductor Nanostructures (1993)