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  1. Article

    Role of the Substitutional Oxygen Donor in the Residual N-Type Conductivity in GaN

    A detailed photoluminescence (PL) study reveals a striking similarity in local vibrational properties of a defect center in GaN as compared to that for the substitutional OP donor in GaP. This observation could b...

    W.M. Chen, I.A. Buyanova, Mt. Wagner… in MRS Internet Journal of Nitride Semiconduc… (1999)

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    Characterization of Deep Level Defects in 4H and 6H SiC Via DLTS, SIMS and MEV E-Beam Irradiation

    Electrically active defects in both 4H and 6H polytypes of SiC have been observed through the use of deep level transient spectroscopy (DLTS). Schottky contacts were grown by vapor phase epitaxy (VPE) with dop...

    J.P. Doyle, M.O. Aboelfotoh, M.K. Linnarsson… in MRS Online Proceedings Library (1996)

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    Article

    Characterization of Defects Created in Silicon Due to Etching in Low-Pressure Plasmas Containing Fluorine and Oxygen

    Defect characterization in n-type silicon after the reactive ion etching (RIE) in low-pressure plasmas containing fluorine and oxygen is performed by using photoluminescence (PL) and deep level transient spect...

    I. A. Buyanova, A. Henry, B. Monemar, J. L. Lindström… in MRS Online Proceedings Library (1995)

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    Article

    Photoluminescence Study of Hydrogen-Related Defects in Silicon

    The effect of ion-implantation followed by a rapid thermal annealing was investigated in boron-doped silicon using photoluminescence (PL) spectroscopy. The radiation induced defects giving rise to the G, W and...

    A. Henry, B. Monemar, J.L. Lindström, Y. Zhang… in MRS Online Proceedings Library (1993)

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    Article

    Defect-Formation Dependence on Group V-Dopant Atoms in Electron-Irradiated Silicon

    The defect states introduced in P-, As- and Sb-doped silicon upon room-temperature electron-irradiation are studied by deep-level transient spectroscopy (DLTS). Evidence is provided for the involvement of the ...

    O. O. Awadelkarim, A. Henry, B. Monemar, J. L. Lindström in MRS Online Proceedings Library (1989)

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    Article

    Optically Detected Magnetic Resonance of a Hydrogen-Related Complex Defect in Silicon

    We present for the first time an optically detected magnetic resonance (ODMR) study of a hydrogen-related defect in silicon. The defect is present in hydrogenated boron-doped silicon single crystals, after roo...

    W. M. Chen, O. O. Awadelkarim, B. Monemar… in MRS Online Proceedings Library (1989)

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    Article

    Hydrogen in Silicon

    We summarize the recent results in hydrogen passivation in silicon, including presenting comprehensive diffusion profiles, i.e., profiles in floating zone n-type and p-type silicon vs resistivity. Domination o...

    J. W. Corbett, J. L. Lindström, S. J. Pearton in MRS Online Proceedings Library (1987)