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    Chapter and Conference Paper

    MECHANISM OF CHARGE TRAPPING REDUCTION IN SCALED HIGH-κ GATE STACKS

    Properties of the defects responsible for fast transient electron trap** phenomenon in high-k gate dielectrics were investigated. It was shown that electrons might be reversibly trapped at shallow, delocaliz...

    G. BERSUKER, B. H. LEE, H.R. HUFF, J. GAVARTIN… in Defects in High-k Gate Dielectric Stacks (2006)