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  1. No Access

    Chapter

    Dilute Nitride Photodetector and Modulator Devices

    The application of the GaInNAsSb compound to the design and fabrication of photodetector and modulator devices for telecommunications is reviewed. An advantage of the material is that even though it is GaAs-ba...

    J. B. Héroux, W. I. Wang in Dilute III-V Nitride Semiconductors and Material Systems (2008)

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    Chapter and Conference Paper

    Photo-induced demagnetization observed by time-resolved mid-infrared transmittance spectroscopy in Ga0.94Mn0.06As

    The spin response of a dilute magnetic Ga0.94Mn0.06As semiconductor sample subject to femtosecond photoexcitation is observed by mid-infrared differential transmittance. A slow rise-time in the hundreds of picose...

    E. Kojima, J.B. Héroux, R. Shimano, Y. Hashimoto, S. Katsumoto… in Ultrafast Phenomena XIV (2005)