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Chapter
Semiconductor Nanowires for Solar Cells
This chapter discusses studies of semiconducting nanowire arrays for solar cells. The concept of 3D nanowire architectures for photovoltaic light harvesting to effectively decouple light absorption and carrier...
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Article
Modeling of Channel Formation in Organic Field Effect Transistors
We report results of two-dimensional electrostatic modeling for (top-contact) organic field effect transistors, focusing on the formation of the conductive channel. The effect on channel formation of the choic...
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Article
Two-dimensional modeling of organic field effect transistors
We present device simulations for p-channel organic field effect transistors. The current conservation equation and Poisson’s equation are solved self-consistently in two dimensions in the drift-diffusion appr...
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Article
Opto-Electronic Properties of μc-Si Grown from SiF4 and H2 by PECVD
Microcrystalline Si was grown from SiF4 and H2 by plasma-enhanced chemical vapor deposition. The films are almost completely crystalline with a crystallite size (determined from Raman spectra) of about 60 Å. The ...
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Article
Critical Review of Raman Spectroscopy as a Diagnostic Tool for Semiconductor Microcrystals
Raman scattering is becoming a widely used tool for the characterization of semiconductor microcrystals due to its sensitivity to crystal sizes below a few hundred angstroms. Through detailed analysis of the f...
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Article
a-Si and μc-Si Grown from SiF4 with High H2 Dilution in a DC Glow Discharge
a-Si and μc-Si were grown from SiF4 with H2 dilution in a DC glow discharge. The crystallinity of films deposited over a range of substrate temperatures and SiF4/H2 flow ratios was studied by Raman spectroscopy a...
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Article
The Effect of Hydrogen on the Structure and Electrical and Optical Properties of Silicon-Germanium Alloys
The transport properties of intrinsic micro-crystalline and amorphous SiGe films are investigated. In the amorphous system it is found that the electron lifetime is relatively independent of band gag while the...
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Article
Picosecond Optical Determination of Carrier Lifetime in Polysilicon Films
The lifetime of optically injected carriers is determined in polySi/SiO2/Si structures grown by LPCVD at 625 °C. These samples are as-grown, have undergone H diffusion or have been implanted by phosphorous ions, ...
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Article
Microcrystallinity in α-Si,Ge:H,F Alloys
Microcrystalline inclusions in hydrogenated and fluorinated amorphous silicon-germanium alloys, α-Si,Ge:H,F, were studied. Microcrystals grown during RF or DC glow discharge deposition from SiF4, GeF4 and H2 cons...
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Article
The Structure of a-Si:H,F/a-Si,Ge:H,F Interfaces
We study the interface between un-alloyed a-Si:H,F and an a-Si0.4,Ge0.6:H,F alloy using superlattice structures. From infrared spectroscopy we estimate a width of 8 A for the excess hydrogen layer, and X-ray diff...
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Article
Properties of Thin Films after Focused Beam Processing
A Raman microprobe is used to detect the changes in crystallinity, stress and homogeneity on thin films of SOI irradiated by a single laser pulse. Maximum, isotropic, planar tensile stress increased from 5 × 109 ...