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Article
Modeling of Channel Formation in Organic Field Effect Transistors
We report results of two-dimensional electrostatic modeling for (top-contact) organic field effect transistors, focusing on the formation of the conductive channel. The effect on channel formation of the choic...
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Article
Two-dimensional modeling of organic field effect transistors
We present device simulations for p-channel organic field effect transistors. The current conservation equation and Poisson’s equation are solved self-consistently in two dimensions in the drift-diffusion appr...
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Article
Opto-Electronic Properties of μc-Si Grown from SiF4 and H2 by PECVD
Microcrystalline Si was grown from SiF4 and H2 by plasma-enhanced chemical vapor deposition. The films are almost completely crystalline with a crystallite size (determined from Raman spectra) of about 60 Å. The ...
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Article
Critical Review of Raman Spectroscopy as a Diagnostic Tool for Semiconductor Microcrystals
Raman scattering is becoming a widely used tool for the characterization of semiconductor microcrystals due to its sensitivity to crystal sizes below a few hundred angstroms. Through detailed analysis of the f...
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Article
a-Si and μc-Si Grown from SiF4 with High H2 Dilution in a DC Glow Discharge
a-Si and μc-Si were grown from SiF4 with H2 dilution in a DC glow discharge. The crystallinity of films deposited over a range of substrate temperatures and SiF4/H2 flow ratios was studied by Raman spectroscopy a...
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Article
The Effect of Hydrogen on the Structure and Electrical and Optical Properties of Silicon-Germanium Alloys
The transport properties of intrinsic micro-crystalline and amorphous SiGe films are investigated. In the amorphous system it is found that the electron lifetime is relatively independent of band gag while the...
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Article
Picosecond Optical Determination of Carrier Lifetime in Polysilicon Films
The lifetime of optically injected carriers is determined in polySi/SiO2/Si structures grown by LPCVD at 625 °C. These samples are as-grown, have undergone H diffusion or have been implanted by phosphorous ions, ...
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Article
Microcrystallinity in α-Si,Ge:H,F Alloys
Microcrystalline inclusions in hydrogenated and fluorinated amorphous silicon-germanium alloys, α-Si,Ge:H,F, were studied. Microcrystals grown during RF or DC glow discharge deposition from SiF4, GeF4 and H2 cons...
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Article
The Structure of a-Si:H,F/a-Si,Ge:H,F Interfaces
We study the interface between un-alloyed a-Si:H,F and an a-Si0.4,Ge0.6:H,F alloy using superlattice structures. From infrared spectroscopy we estimate a width of 8 A for the excess hydrogen layer, and X-ray diff...
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Article
Properties of Thin Films after Focused Beam Processing
A Raman microprobe is used to detect the changes in crystallinity, stress and homogeneity on thin films of SOI irradiated by a single laser pulse. Maximum, isotropic, planar tensile stress increased from 5 × 109 ...