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  1. No Access

    Article

    Modeling of Channel Formation in Organic Field Effect Transistors

    We report results of two-dimensional electrostatic modeling for (top-contact) organic field effect transistors, focusing on the formation of the conductive channel. The effect on channel formation of the choic...

    T. Li, P. P. Ruden, I. H. Campbell, D. L. Smith in MRS Online Proceedings Library (2011)

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    Article

    Two-dimensional modeling of organic field effect transistors

    We present device simulations for p-channel organic field effect transistors. The current conservation equation and Poisson’s equation are solved self-consistently in two dimensions in the drift-diffusion appr...

    T. Li, P. P. Ruden, I. H. Campbell, D. L. Smith in MRS Online Proceedings Library (2002)

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    Article

    Opto-Electronic Properties of μc-Si Grown from SiF4 and H2 by PECVD

    Microcrystalline Si was grown from SiF4 and H2 by plasma-enhanced chemical vapor deposition. The films are almost completely crystalline with a crystallite size (determined from Raman spectra) of about 60 Å. The ...

    Y. Okada, I. H. Campbell, P. M. Fauchet, S. Wagner in MRS Online Proceedings Library (1989)

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    Article

    Critical Review of Raman Spectroscopy as a Diagnostic Tool for Semiconductor Microcrystals

    Raman scattering is becoming a widely used tool for the characterization of semiconductor microcrystals due to its sensitivity to crystal sizes below a few hundred angstroms. Through detailed analysis of the f...

    P. M Fauchet, I. H. Campbell in MRS Online Proceedings Library (1989)

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    Article

    a-Si and μc-Si Grown from SiF4 with High H2 Dilution in a DC Glow Discharge

    a-Si and μc-Si were grown from SiF4 with H2 dilution in a DC glow discharge. The crystallinity of films deposited over a range of substrate temperatures and SiF4/H2 flow ratios was studied by Raman spectroscopy a...

    Y. Okada, J. Chen, I. H. Campbell, P. M. Fauchet in MRS Online Proceedings Library (1989)

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    Article

    The Effect of Hydrogen on the Structure and Electrical and Optical Properties of Silicon-Germanium Alloys

    The transport properties of intrinsic micro-crystalline and amorphous SiGe films are investigated. In the amorphous system it is found that the electron lifetime is relatively independent of band gag while the...

    C. M. Fortmann, D. E. Albright, I. H. Campbell in MRS Online Proceedings Library (1989)

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    Article

    Picosecond Optical Determination of Carrier Lifetime in Polysilicon Films

    The lifetime of optically injected carriers is determined in polySi/SiO2/Si structures grown by LPCVD at 625 °C. These samples are as-grown, have undergone H diffusion or have been implanted by phosphorous ions, ...

    N. K. Bambha, W. L. Nighan, I. H. Campbell, P. M. Fauchet in MRS Online Proceedings Library (1987)

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    Article

    Microcrystallinity in α-Si,Ge:H,F Alloys

    Microcrystalline inclusions in hydrogenated and fluorinated amorphous silicon-germanium alloys, α-Si,Ge:H,F, were studied. Microcrystals grown during RF or DC glow discharge deposition from SiF4, GeF4 and H2 cons...

    D. S. Shen, J. Kolodzey, D. Slobodin, J. P. Conde in MRS Online Proceedings Library (1986)

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    Article

    The Structure of a-Si:H,F/a-Si,Ge:H,F Interfaces

    We study the interface between un-alloyed a-Si:H,F and an a-Si0.4,Ge0.6:H,F alloy using superlattice structures. From infrared spectroscopy we estimate a width of 8 A for the excess hydrogen layer, and X-ray diff...

    J. P. Conde, D.-S. Shen, I. H. Campbell, P. M. Fauchet in MRS Online Proceedings Library (1986)

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    Article

    Properties of Thin Films after Focused Beam Processing

    A Raman microprobe is used to detect the changes in crystallinity, stress and homogeneity on thin films of SOI irradiated by a single laser pulse. Maximum, isotropic, planar tensile stress increased from 5 × 109 ...

    I. H. Campbell, P. M. Fauchet, Fran Adar in MRS Online Proceedings Library (1985)