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Article
Synthesis and enhanced formaldehyde gas-sensing performance of mesoporous SnO2 nanospheres doped with trivalent metal-cations
Mesoporous SnO2, Sn0.861Al0.186O2, Sn0.921In0.106O2 and Sn0.959La0.055O2 nanospheres were successfully synthesized by a one-step solvothermal method. The compositions, crystal structures, microstructures, morphol...
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Article
Recent advances in composite films of lead-free ferroelectric ceramics and poly (vinylidene fluoride) (PVDF) for energy storage capacitor: a review
The introduction of lead-free ferroelectric ceramic materials into polymer matrix to form polymer composite materials and the construction of multilayer structure are two new and promising methods to prepare d...
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Article
Open AccessEndless Dirac nodal lines in kagome-metal Ni3In2S2
Topological semimetals are a frontier of quantum materials. In multiband electronic systems, topological band crossings can form closed curves, known as nodal lines. In the presence of spin–orbit coupling and/...
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Article
A conductive AFM study of carbon-rich hexagonal (BN)C semiconductor alloys
The conductive atomic force microscopy was employed to map different phases and their boundaries to provide insights into phase separation mechanisms in carbon-rich h-(BN)C alloys. One of three phases identifi...
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Article
Effect of Ho-do** on structural, electrical and magnetic properties of La0.7Sr0.3MnO3 ceramics prepared by Plasma-Activated Sintering
Different components of La0.7−x Ho x Sr0.3MnO3 (LHSMO, x = 0, 0.1, 0.2, 0.3) ceramics were fabricated by Plasma-Activated Sintering (PAS), so as to study ...
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Article
Selective laser melting of H13: microstructure and residual stress
In this research, samples of the H13 steel, a commonly used hot work tool steel in the die/mould manufacturing industry, were additively manufactured using selective laser melting (SLM). Their as-built microst...
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Article
Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD
We report the temperature dependence of Er optical centers in GaN epilayers prepared by metal-organic chemical vapor deposition under the resonant excitation (4I15/2 →4I9/2) excitation using a Ti:Sapphire laser (...
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Article
Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector
The performance of new type three dimensional buried-in electrode structure ultraviolet photodetector fabricated on single crystal diamond epitaxial layer was investigated. The epitaxial layer was grown on hig...
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Article
Luminescent properties of red-light-emitting phosphors CaWO4 : Eu3+, Li+ for near UV LED
A series of red phosphors Ca1−2x WO4 : xEu3+, xLi+ (x = 0.01, 0.02, 0.04, 0.06, 0.12, 0.20 and 0.30) in pure phase were synthesized via high-temperature solid-state reaction and their lumi...
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Article
Advanced unified failure model on uniformly reinforced concrete annular section members
Based on traditional Nielsen model (Nielsen, Limit analysis and concrete plasticity, Prentice-Hall, Englewood Cliffs 1984), a unified failure model on uniformly reinforced concrete annular section members under c...
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Article
Dynamic tangential contact of rough surfaces in stick-slip microdrives: Modeling and validation using the method of dimensionality Reduction
The dynamic tangential contact of rough surfaces of frictional elements of a stick-slip microdrive is theoretically investigated. By applying the method of dimensionality reduction, the contact areas of the fr...
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Article
The elastic and geometrical properties of micro- and nano-structured hierarchical random irregular honeycombs
All the five independent elastic properties/constants of micro- and nano-structured hierarchical and self-similar random irregular honeycombs with different degrees of cell regularity are obtained by analysis ...
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Article
Nano Superlattice-like Materials as Thermal Insulators for Phase-Change Random Access Memory
Nanoscale superlattice-like (SLL) dielectric was employed to reduce the power consumption of the Phase-change random access memory (PCRAM) cells. In this study, we have simulated and found that the cells with ...
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Article
Correlation between Sheet Carrier Density-Mobility Product and Persistent Photoconductivity in ALGAN/GAN Modulation Doped Heterostructures
High quality Al0.25Ga0.75N/GaN modulation-doped heterojunction field-effect transistor (MOD-HFET) structures grown on sapphire substrates with high sheet carrier density and mobility products (nsμ > 1016/Vs at ro...
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Article
Electronic Raman Scattering from Mg-Doped Wurtzite GaN
Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM ≅ 15cm−1) observed for the fir...
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Article
Thermoelectric Properties of Er-doped InGaN Alloys for High Temperature Applications
Thermoelectric (TE) properties of erbium-silicon co-doped InxGa1-xN alloys (InxGa1-xN: Er + Si, 0≤x≤0.14), grown by metal organic chemical vapor deposition, have been investigated. It was found that do** of InG...
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Article
Synthesis and Optical Properties of a Novel Oligobipyridine
In this paper, 5,5’ -bis [4’- methyl- ( 2,2’- bipyridin- 4- yl)- ethyl ]- 2,2’- bipyridine (BMBPYBPY), a partially conjugated derivative of oligobipyridine, has been synthesized and found to show strong photol...
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Article
Study of 2,6-Linked Quinquepyridine Derivative as Luminescence Materials
Both photoluminescence (PL) and electroluminescence (EL) properties of 6,6””-dimethyl-4’, 4”’-diphenyl-2,2’:6’,2”:6”,2”’:6”’,2””-quinquepyridine (DMDPQPY), a 2,6-linked oligopy- ridine derivative, have been in...
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Article
Synthesis and Comparison of Boron Nitride Nanostructure Prepared on Silicon and Molybdenum Substrates by Laser Plasma Deposition Technique
The synthesis of boron nitride nanowires on silicon (Si) and nanorods on molybdenum (Mo) substrates at the same experimental conditions was composed. Fine tip nanowires with diameters around 50 nm were produce...
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Article
Photoluminescence Studies of [(CdSe)1(ZnSe)2]9-ZnSeTe Multiple Quantum Wells Under High Pressure
We have performed photoluminescence (PL) measurements at liquid nitrogen temperature under high pressure up to 5.5 GPa and in the temperature range 10-300 K at atmospheric pressure on (ZnSe)30(ZnSe0.92Te0.08)30(Z...