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  1. Article

    Non-linear astrophysical dynamos

    H.K. Moffat in Nature (1980)

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    Article

    Monitoring of MOCVD reactants by UV absorption

    In this paper, we describe how UV absorption measurements can be used to measure the flow rates of metalorganic chemical vapor deposition (MOCVD) reactants. This method utilizes the calculation of UV extinctio...

    K. C. Baucom, K. P. Killeen, H. K. Moffat in Journal of Electronic Materials (1995)

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    Article

    Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films

    We have performed an extensive study of GaAs, Al0.22Ga0.78As, and In0.16Ga0.84As grown using tertiarybutylarsine (TBA) in an ultra-high purity metalorganic chemical vapor deposition multi-wafer reactor. Key resul...

    H. C. Chui, R. M. Biefeld, B. E. Hammons, W. G. Breiland… in Journal of Electronic Materials (1997)

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    Article

    Robust Reaction-Transport Models of MOVPE Reactors

    A simple gas-phase and surface kinetic model describing the Metalorganic Vapor Phase Epitaxy (MOVPE) of GaAs from trimethyl-gallium (TMG) and arsine has been extracted from reported reaction mechanisms through...

    C. Theodoropoulos, H. K. Moffat, T. J. Mountziaris in MRS Online Proceedings Library (1997)

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    Article

    Optimal Design of Reactors for Metalorganic Vapor Phase Epitaxy of Group III Nitrides

    Metalorganic Vapor Phase Epitaxy (MOVPE) has emerged as the technique of choice for growing thin films and structures of group III-nitrides. The objective of this work is to address the optimal design of verti...

    R. P. Pawlowski, C. Theodoropoulos, T. J. Mountziaris… in MRS Online Proceedings Library (2000)