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8 Result(s)

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  1. No Access

    Article

    Polymorphous Silicon Films Produced in Large Area Reactors by PECVD at 27.12 MHz and 13.56 MHz

    This work refers to a study performed on polymorphous silicon (pm-Si:H) at excitation frequencies of 13.56 and 27.12 MHz in a large area PECVD reactor. The plasma was characterised by impedance probe measureme...

    H. Águas, L. Raniero, L. Pereira, E. Fortunato… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Correlation Between the Tunnelling Oxide and I-V Curves of MIS Photodiodes

    In this work we present results of a study performed on MIS diodes with the following structure: substrate (glass) / Cr (2000Å) / a-Si:H n+ (400Å) / a-Si:H i (5500Å) / oxide (0-40Å) / Au (100Å) to determine the i...

    H. Águas, L. Pereira, A. Goullet, R. Silva, E. Fortunato… in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    Gallium zinc oxide coated polymeric substrates for optoelectronic applications

    Highly transparent and conductive ZnO:Ga thin films were produced by rf magnetron sputtering at room temperature on polyethylene naphthalate substrates. The films present a good electrical and optical stabilit...

    E. Fortunato, A. Gonçalves, A. Marques, V. Assunção… in MRS Online Proceedings Library (2003)

  4. No Access

    Article

    Detection Limits of a nip a-Si:H Linear Array Position Sensitive Detector

    This paper presents results of the spatial and frequency detection limits of an integrated array of 32 one-dimensional amorphous silicon thin film position sensitive detectors with a nip structure, under conti...

    R. Martins, D. Costa, H. Águas, F. Soares, A. Marques… in MRS Online Proceedings Library (2003)

  5. No Access

    Article

    Characterization of Transparent and Conductive ZnO:Ga Thin Films Produced by Rf Sputtering at Room Temperature

    Gallium-doped zinc oxide films were prepared by rf magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resis...

    E. Fortunato, V. Assunção, A. Marques, I. Ferreira… in MRS Online Proceedings Library (2002)

  6. No Access

    Article

    Nanostructured silicon films produced by PECVD

    This paper presents the process conditions that lead to the production of nanostructured silicon films grown by plasma enhanced chemical vapour deposition close to the so-called gamma regime (powder formation)...

    R. Martins, H. Águas, V. Silva, I. Ferreira, A. Cabrita… in MRS Online Proceedings Library (2000)

  7. No Access

    Article

    Performances of Nano/Amorphous Silicon Films Produced by Hot Wire Plasma Assisted Technique

    This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanopa...

    I. Ferreira, H. Águas, L. Mendes, F. Fernandes… in MRS Online Proceedings Library (1998)

  8. No Access

    Article

    Influence of the H2 Dilution And Filament Temperature on the Properties of P Doped Silicon Carbide Thin Films Produced by Hot-Wire Technique

    This work deals with the role of hydrogen dilution and filament temperature on the morphology, structure and electrical properties of nanocrystalline boron doped silicon carbide thin films produced by hot-wire...

    I. Ferreira, H. Águas, L. Mendes, F. Fernandes… in MRS Online Proceedings Library (1998)