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    Article

    Top-Gate Graphene-on-UNCD Transistors with Enhanced Performance

    We fabricated a number of top-gate graphene field-effect transistors on the ultrananocrystalline diamond (UNCD) – Si composite substrates. Raman spectroscopy, scanning electron microscopy and atomic force micr...

    Jie Yu, Guanxiong Liu, Anirudha V. Sumant in MRS Online Proceedings Library (2011)

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    Experimental Demonstration of Thermal Management of High-Power GaN Transistors with Graphene Lateral Heat Spreaders

    Graphene is a promising candidate material for thermal management of high-power electronics owing to its high intrinsic thermal conductivity. Here we report preliminary results of the proof-of-concept demonstr...

    Zhong Yan, Guanxiong Liu, Javed Khan, Jie Yu in MRS Online Proceedings Library (2011)

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    Reversible Tuning of the Electronic Properties of Graphene via Controlled Exposure to Electron Beam Irradiation and Annealing

    Graphene reveals many extraordinary properties including extremely high room temperature carrier mobility and intrinsic thermal conductivity. Understanding how to controllably modify graphene’s properties is e...

    Desalegne Teweldebrhan, Guanxiong Liu in MRS Online Proceedings Library (2011)

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    Article

    DNA Gating effect from single layer graphene

    In this letter, single stranded Deoxyribonucleic Acids (ssDNA) are found to act as negative potential gating agents that increase the hole density in single layer graphene (SLG). Current-voltage measurement of...

    Jian Lin, Desalegne Teweldebrhan, Khalid Ashraf in MRS Online Proceedings Library (2011)

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    Article

    1/f Noise in Graphene Field-Effect Transistors: Dependence on the Device Channel Area

    We carried out a systematic experimental study of the low-frequency noise characteristics in a large number of single and bilayer graphene transistors. The prime purpose was to determine the dominant noise sou...

    Guanxiong Liu, Sergey Rumyantsev, William Stillman in MRS Online Proceedings Library (2011)