21 Result(s)
within
G. De Cesare
Characterization and Evaluation of Materials
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Article
Fabrication of Photoluminescent Amorphous Pillar Silicon Structures
Fabrication of amorphous pillar silicon structures showing visible photoluminescence (PL) by naked eye is reported. Some attempts involving silicon etching processes were previously performed by other authors,...
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Article
Lab-on-glass system for DNA analysis using thin and thick film technologies
In this paper, we present a compact lab-on-chip system suited for label-free DNA analysis. The system can be fabricated on a conventional microscope glass slide using thin-film and thick-film technologies. It ...
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Article
Photocapacitance of Hydrogenated Amorphous Silicon Phototransistors
Amorphous silicon-based phototransistors are studied as an alternative solution to replace pixel-level amplifiers simplifying large-area imaging systems. We report electrical characterization by means of curre...
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Article
A Junction Field Effect Transistor Based on Hydrogenated Amorphous Silicon
An hydrogenated amorphous silicon junction field effect transistor suitable for analog and digital applications is presented. The device is constituted by a p+ - i - n− junction, with the drain and source contact...
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Article
Non Linear Optical Gain in Bulk Barrier Amorphous Silicon Phototransistor
In this work we report studies on the non linear dependence of the optical gain with the incident power in an amorphous silicon bulk barrier phototransistor based on a n-i-p-i-n structure. The optical gain sho...
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Article
Near Infrared Response of Amorphous Silicon Detector Grown with Microcompensated Absorber Layer
In this work we demonstrate that radiation up to 2 µm induces photocurrent in a single junction amorphous silicon structure at room temperature. The absorber layer is a microcompensated film deposited using ve...
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Article
A Novel Room Temperature Infrared Detector Using Micro-Compensated Amorphous Silicon
Detection at room temperature of near and medium infrared radiation has been achieved by using micro-doped or micro-compensated amorphous silicon films as intermediate absorber layer in a p-n junction. Extreme...
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Article
Evidence of Hysteresis in a New p-i-n-i-p-i-n Amorphous Silicon Device
A novel device based on a-Si:H p+-i-n--i-p--i-n+ structure, showing a hysteresis in its current-voltage curve is reported. A numerical device model allows to investigate in detail the fundamental role of the two ...
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Article
A CdTe Position Sensitive Detector for a Hard X-and Gamma-Ray Wide Field Camera
An important region of the electromagnetic spectrum for astrophysics is the hard X- and gamma ray band between 10 keV and a few MeV, where several processes occur in a wide variety of objects and with differen...
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Article
On the Compensation Mechanism of Amorphous Silicon Films: Study of Stability
We investigated a-Si:H compensated materials deposited over a wide range of gas dopant concentrations, from 0.125 ppm up to 103 ppm.
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Article
Spectroscopic Response Versus Interelectrodic Charge Formation Position in CdTe Detectors
The electron-hole pair production energy (∼ 4.43 eV) in cadmium telluride semiconductor based detector would allow, in principle, to achieve spectroscopic performance close to germanium. In fact the material i...
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Article
Amorphous/Crystalline Silicon Two Terminal Visible/Infrared Tunable Photodetector: Modeling and Realization
Difference in the absorption coefficient profile of the amorphous and crystalline silicon is the key idea for the realization of a new visible/infrared tunable photodetector (VIP). The device consists on a n-d...
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Article
Effect Of μ-Doped Compensated Material on Stability of a-Si:H Solar Cells
In this paper we focus our attention on compensated materials with (μ-do** concentration in order to obtain a stable intrinsic layer with initial high photoconductivity suitable for p-i-n solar cells. Films ...
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Article
Anisotropy of Aluminum Porous Anodization Process for Vlsi Planar Metallization
In this work factors affecting the anisotropy (i.e., difference in vertical and lateral anodization rates) of the aluminum anodization process are investigated. By varying the electrochemical process parameter...
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Article
a-Si:H/a-SiC:H Heterostructure for Bias-Controlled Photodetectors
We present a novel family of photodetectors based on hydrogenated amorphous Si/SiC p-i-n-i-p heterostructures. Front p-i-n and rear n-i-p diodes work one as a detector and the other as a load impedance, depend...
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Article
Evidence of Energy Relaxation of Charged Defects in Amorphous Silicon Via Forward Bias Capacitance Measurements
In this paper we show that the usual behaviour of forward bias C-V-f measurements performed on p-i-n structure, Modifies at the lowest test frequencies when the measurement is performed at high temperature (12...
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Article
Addressable Photosensing Elements for 2-Dimensional Image Sensors Using a-Si Alloy P-I-N Diodes
We describe amorphous silicon alloy addressable photo-sensitive elements whose operation has been experimentally verified in 2-dimensional image sensors. The investigated structures consist of p-i-n photodiode...
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Article
On the Role of the Staebler-Wronski Susceptibility in Hydrogenated Amorphous Silicon
Photoconductivity decay during monochromatic illumination has been measured on an ensemble of a-Si:H films deposited at different substrate temperatures. Degradation behaviour has been modelled within the fram...
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Article
Correlation Between Minority Carrier Diffusion Length and Microstructure in a-Si:H Thin Films
Aim of this work is to investigate the opto-electronic properties of amorphous hydrogenated silicon (a-Si:H). The deposition temperature nas been used as a driving force to modify the morphology and bonded hyd...
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Article
Loss Peaks in the AC Conductivity of a-Si:H
The electrical conductivity of a-Si:H films was investigated in the temperature range 300K - 450K under an alternative electric field whose frequency was in the range 100 Hz - 6x106 Hz. Loss peaks were detected, ...
