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    Chapter and Conference Paper

    A Model for the Direct Bias C-V Measurements on a-Si:H p-i-n Solar Cells

    In this paper we present a new analytical model for the direct bias capacitance in p-i-n amorphous silicon solar cells. The model includes the contributions due to band tails and dangling bonds trap states in ...

    D. Caputo, G. De Cesare, F. Irrera, F. Palma in Tenth E.C. Photovoltaic Solar Energy Confe… (1991)