13 Result(s)

Article

New-Generation Ferroelectric AlScN Materials

Article

Author Correction: Atomic-level polarization reversal in sliding ferroelectric semiconductors

Fengrui Sui, Haoyang Li, Ruijuan Qi, Min **, Zhiwei Lv… in Nature Communications (2024)

Article

Halide Perovskite Inducing Anomalous Nonvolatile Polarization in Poly(vinylidene fluoride)-based Flexible Nanocomposites

Ferroelectric materials have important applications in transduction, data storage, and nonlinear optics. Inorganic ferroelectrics such as lead zirconate titanate possess large polarization, though they are rig...

Yao Wang, Chen Huang, Ziwei Cheng, Zhenghao Liu, Yuan Zhang… in Nature Communications (2024)

Article

Atomic-level polarization reversal in sliding ferroelectric semiconductors

Intriguing “slidetronics” has been reported in van der Waals (vdW) layered non-centrosymmetric materials and newly-emerging artificially-tuned twisted moiré superlattices, but correlative experiments that spat...

Fengrui Sui, Haoyang Li, Ruijuan Qi, Min **, Zhiwei Lv… in Nature Communications (2024)

Article

Author Correction: Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing

Guangjian Wu, Xumeng Zhang, Guangdi Feng, **gli Wang, Keji Zhou… in Nature Materials (2024)

Article

Low-k nano-dielectrics facilitate electric-field induced phase transition in high-k ferroelectric polymers for sustainable electrocaloric refrigeration

Ferroelectric polymer-based electrocaloric effect may lead to sustainable heat pumps and refrigeration owing to the large electrocaloric-induced entropy changes, flexible, lightweight and zero-global warming p...

Qiang Li, Luqi Wei, Ni Zhong, **aoming Shi, Donglin Han… in Nature Communications (2024)

Article

A ferroelectric fin diode for robust non-volatile memory

Among today’s nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their perf...

Guangdi Feng, Qiuxiang Zhu, Xuefeng Liu, Luqiu Chen, **aoming Zhao… in Nature Communications (2024)

Article

Multiresistance states in ferro- and antiferroelectric trilayer boron nitride

Stacking two atomic layers together can induce interlayer (sliding) ferroelectricity that is absent in their naturally occurring crystal forms. With the flexibility of two-dimensional materials, more layers co...

Ming Lv, Jiulong Wang, Ming Tian, Neng Wan, Wenyi Tong… in Nature Communications (2024)

Article

Publisher Correction: Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing

Guangjian Wu, Xumeng Zhang, Guangdi Feng, **gli Wang, Keji Zhou… in Nature Materials (2023)

Article

In-situ artificial retina with all-in-one reconfigurable photomemristor networks

Despite that in-sensor processing has been proposed to remove the latency and energy consumption during the inevitable data transfer between spatial-separated sensors, memories and processors in traditional co...

Yichen Cai, Yizhou Jiang, Chenxu Sheng, Zhiyong Wu, Luqiu Chen… in npj Flexible Electronics (2023)

Article

Molecular ferroelectric/semiconductor interfacial memristors for artificial synapses

With the burgeoning developments in artificial intelligence, hardware implementation of artificial neural network is also gaining pace. In this pursuit, ferroelectric devices (i.e., tunneling junctions and tra...

Yichen Cai, Jialong Zhang, Mengge Yan, Yizhou Jiang… in npj Flexible Electronics (2022)

Article

Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory

Traditional ferroelectric devices suffer a lack of scalability. Doped HfO₂ thin film is promising to solve the scaling problem but challenged by high leakage current and uniformity concern by the polycrystalline ...

Yue Peng, Genquan Han, Fenning Liu, Wenwu **ao, Yan Liu… in Nanoscale Research Letters (2020)

Article

ZrO₂ Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles

This paper investigates the impacts of post-rapid thermal anneal (RTA) and thickness of ZrO₂ on the polarization P and electrical characteristics of TaN/ZrO₂/Ge capacitors and FeFETs, respectively. After the RTA ...

Huan Liu, Yue Peng, Genquan Han, Yan Liu, Ni Zhong… in Nanoscale Research Letters (2020)