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  1. Article

    Open Access

    Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors

    In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In2O3) on the InAs nanowire surface serve...

    Chaofei Zha, Wei Luo, **a Zhang, **n Yan, **aomin Ren in Nanoscale Research Letters (2022)

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