Skip to main content

8 Result(s)

within C.S. Ma Remove this filter Characterization and Evaluation of Materials Remove this filter

and

  1. No Access

    Article

    Investigation on push-pull polymer Mach-Zehnder interferometer electro-optic switches using improved 3-D mode propagation analysis method

    By introducing normalized mode excitation coefficient and total mode excitation coefficient, we improve the 3-D mode propagation analysis (MPA) method for convenient design and analysis of multimode interferen...

    C. T. Zheng, C. S. Ma, Z. C. Cui, X. Yan, D. M. Zhang… in Optical and Quantum Electronics (2011)

  2. No Access

    Article

    Effect of Al content on the formation of intermetallic compounds in Sn–Ag–Zn lead-free solder

    The effect of addition of Al, up to 1 wt.%, on the formation of intermetallic compounds in the microstructure of Sn–3.7%Ag–0.9%Zn lead-free solder was investigated. The typical microstructure of Sn–Ag–Zn solde...

    J. B. Wan, Y. C. Liu, C. Wei, Z. M. Gao… in Journal of Materials Science: Materials in… (2008)

  3. No Access

    Article

    An Efficient Technique for Analyzing Transmission Characteristics of Arrayed Waveguide Grating Multiplexers

    An efficient technique is presented for analyzing transmission characteristics of arrayed waveguide grating (AWG) multiplexers. As an example, calculations using this technique are performed for a polymer 33 ×...

    C.-S. Ma, X.-Y. Wang, H.-M. Zhang, D.-M. Zhang… in Optical and Quantum Electronics (2004)

  4. No Access

    Article

    Suppression of Polarization Dependence in the Design of a 11×11 Polymer/Si Arrayed Waveguide Grating

    In this paper we report an effective work of polarization independence in the design of a 11×,11 polymer arrayed waveguide grating (AWG) multiplexer. Theoretical analysis of the polarization properties is give...

    Y. Zhao, C.S. Ma, F. Wang, D.M. Zhang, Z.C. Cui… in Optical and Quantum Electronics (2004)

  5. No Access

    Article

    Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

    Analysis is performed for valence band structures and some characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers lattice-matched to InP substrate. The computed results show that band offsets...

    C.S. Ma, L.J. Wang, S.Y. Liu in Optical and Quantum Electronics (2001)

  6. No Access

    Article

    Analysis of coupling effect on valence band structures of strained multiple quantum wells

    The multi-well energy representation technique is presented for the analysis of the valence band structures of multiple quantum well (MQW) lasers. In terms of this technique and its relative formulae, calculat...

    C. S. MA, C. H. HAN, S. Y. LIU in Optical and Quantum Electronics (1997)

  7. No Access

    Article

    Deep-level photoluminescence studies of undoped and tin-doped (LEC) InP

    The effects of tin do** on the deep-level photoluminescence (PL) spectra of (LEC) InP were studied. Specifically, the effect of rapid thermal annealing (RTA) on the deep emission bands labelled as band A (1....

    C. S. Ma, P. W. Chan, V. C. Lo, C. W. Ong… in Journal of Materials Science: Materials in… (1994)

  8. No Access

    Article

    Investigation of the 1.20-eV photoluminescence band in rapid thermal annealed InP

    Deep level photoluminescence of rapid thermal annealed (RTA) undoped liquid-encapsulated Czochralski InP has been studied. Aband occurring at 1.20 eV, not observed in as-grown sample, became a dominant deep le...

    C. S. Ma, P. W. Chan, V. C. Lo, C. W. Ong, S. P. Wong in Journal of Electronic Materials (1994)