Skip to main content

4 Result(s)

within C. Theodoropoulos Remove this filter Characterization and Evaluation of Materials Remove this filter

and

  1. No Access

    Article

    Optimal Design of Reactors for Metalorganic Vapor Phase Epitaxy of Group III Nitrides

    Metalorganic Vapor Phase Epitaxy (MOVPE) has emerged as the technique of choice for growing thin films and structures of group III-nitrides. The objective of this work is to address the optimal design of verti...

    R. P. Pawlowski, C. Theodoropoulos, T. J. Mountziaris… in MRS Online Proceedings Library (2000)

  2. No Access

    Article

    Robust Reaction-Transport Models of MOVPE Reactors

    A simple gas-phase and surface kinetic model describing the Metalorganic Vapor Phase Epitaxy (MOVPE) of GaAs from trimethyl-gallium (TMG) and arsine has been extracted from reported reaction mechanisms through...

    C. Theodoropoulos, H. K. Moffat, T. J. Mountziaris in MRS Online Proceedings Library (1997)

  3. No Access

    Article

    Optimal Design of Stagnation-Flow MOVPE Reactors with Axisymmetric Multi-Aperture Inlets

    An approach for optimal design of vertical stagnation flow Metalorganic Vapor Phase Epitaxy (MOVPE) reactors that minimizes parasitic pre-reactions between the film precursors is presented. The use of axisymme...

    V. Gupta, C. Theodoropoulos, J. D. Peck… in MRS Online Proceedings Library (1997)

  4. No Access

    Article

    Kinetics of Low-Pressure MOCVD of GaAs from Triethyl-Gallium and Arsine

    The growth of undoped GaAs films from Ga(C2H5)3 (TEG) and AsH3 by Metalorganic Chemical Vapor Deposition (MOCVD) has been studied in a low-pressure reactor operating at 3 Torr. This precursor combination is known...

    N. K. Ingle, C. Theodoropoulos, T. J. Mountziaris… in MRS Online Proceedings Library (1993)