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    Article

    Low Temperature Growth of Gaas Quantum Well Lasers by Modulated Beam Epitaxy

    GaAs single quantum well lasers have been successfully grown at low temperatures by a modulated beam epitaxy process in which the Al/Ga flux is held constant while the As flux is periodically shut off to produ...

    S. **n, K. F. Longenbach, C. Schwartz, Y. Jiang in MRS Online Proceedings Library (1991)

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    Article

    Exciton Transitions in Narrow GaAs/AlxGa1-x As Quantum Wells

    Electroreflectance (ER) measurements were made on GaAs/AlxGa1-x As coupled quantum wells at room temperature and at 77K. The close coupling of the narrow (28.3 A) barriers resulted in splitting of the hole and el...

    O. L. Russo, V. Rehn, T. W. Nee, T. L. Cole, W. M. Theis in MRS Online Proceedings Library (1992)