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Exciton Transitions in Narrow GaAs/AlxGa1-x As Quantum Wells
Electroreflectance (ER) measurements were made on GaAs/AlxGa1-x As coupled quantum wells at room temperature and at 77K. The close coupling of the narrow (28.3 A) barriers resulted in splitting of the hole and el...
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Article
Low Temperature Growth of Gaas Quantum Well Lasers by Modulated Beam Epitaxy
GaAs single quantum well lasers have been successfully grown at low temperatures by a modulated beam epitaxy process in which the Al/Ga flux is held constant while the As flux is periodically shut off to produ...