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  1. No Access

    Article

    Annealing Study of Ga Implanted p-Type 6H-SiC for Ohmic Contact Metallizations

    Shallow implantations of Ga ions were performed on p-type 6H-SiC by conventional broad area implantation, and the physical and electrical properties of the Ga-SiC system upon high temperature annealing were ex...

    M. Prenatt, A. A. Iliadis, R. D. Vispute, M. C. Wood… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Pendeo Epitaxy Of 3C-SiC on Si Substrates

    Pendeo Epitaxy is a type of Lateral Epitaxial Overgrowth (LEO) that instead of using a dielectric buffer layer, uses an etched substrate to grow laterally without an interface layer. We report the first succes...

    G. E. Carter, T. Zheleva, G. Melnychuck, B. Geil… in MRS Online Proceedings Library (1994)