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  1. No Access

    Article

    Luminescence Study of Wet Chemically Etched InP/InGaAs-Submicron-Structures

    We have investigated the optical properties of wet chemically etched InP/InGaAs-wires and dots with widths between 100 nm and 10 µm for different excitation densities. We observe that the non radiative recombinat...

    B. Jacobs, H. Zull, A. Forchel, I. Gyuro, P. Speier… in MRS Online Proceedings Library (1992)

  2. Article

    Highly Chemical Reactive Ion Etching of Gallium Nitride

    A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containin...

    F. Karouta, B. Jacobs, I. Moerman, K. Jacobs… in MRS Internet Journal of Nitride Semiconduc… (2000)

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  3. No Access

    Article

    Passive components on AlN for application in AlGaN/GaN power amplifiers

    We have investigated Coplanar Waveguide (CPW) elements on AlN for use in future AlGaN/GaN based power amplifiers. This technology becomes crucial if a via-hole technology is not available. Lines, discontinuiti...

    B. Jacobs, B. van Straaten, M. Kramer, F. Karouta, P. Hek… in MRS Online Proceedings Library (2001)

  4. No Access

    Article

    Components for AlGaN/GaN Power Amplifiers

    Ohmic contacts and Schottky contacts were made on an undoped AlGaN/GaN FET structure. Despite the high Al content (33%), we were still able to obtain a contact resistance of 0.3 ωmm. Pulsed measurements showed...

    B. Jacobs, P. Wingelaar, M. Kramer, S. Falcone… in MRS Online Proceedings Library (2011)

  5. No Access

    Article

    Highly Chemical Reactive Ion Etching of Gallium Nitride

    A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containin...

    F. Karouta, B. Jacobs, I. Moerman, K. Jacobs… in MRS Online Proceedings Library (2012)