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9 Result(s)

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  1. No Access

    Article

    Experimental Study of Self-Diffusion in Silicon Using Isotopically Enriched Structures

    Self-diffusion in silicon has been studied using epitaxially grown isotopically enriched structures under nonequilibrium concentrations of intrinsic point defects created by thermal oxidation and nitridation. ...

    Ant Ural, Peter B. Griffin, James D. Plummer in MRS Online Proceedings Library (1999)

  2. No Access

    Article

    What Does Self-Diffusion Tell Us about Ultra Shallow Junctions?

    Understand ing the coupling between native point defects and dopants at high concentrations in silicon will be key to ultra shallow junction formation in silicon technology. Other effects, such as transient en...

    Ant Ural, Serene Koh, P. B. Griffin, J. D. Plummer in MRS Online Proceedings Library (2000)

  3. No Access

    Article

    Carbon nanotube growth from nanoscale clusters formed by ion implantation

    We have demonstrated that iron ions implanted into silicon dioxide thin films form nanoscale clusters which can act as catalyst for carbon nanotube growth. We have implanted iron ions with an energy of 60 keV ...

    Yongho Choi, Jennifer Sippel Oakley, Andrew Rinzler… in MRS Online Proceedings Library (2006)

  4. No Access

    Article

    Micromachined Silicon Grids for Direct TEM Characterization of Carbon Nanotubes Grown by CVD

    Transmission electron microscopy (TEM) is a key technique in the structural characterization of carbon nanotubes. For device applications, carbon nanotubes are typically grown by chemical vapor deposition (CVD...

    Yongho Choi, Jason Johnson, Ryan Moreau, Eric Perozziello… in MRS Online Proceedings Library (2007)

  5. No Access

    Article

    Geometry Dependent Resistivity in Single-Walled Carbon Nanotube Films Patterned Down to Submicron Dimensions

    We demonstrate patterning of SWNT films down to 200 nm lateral dimensions using e-beam lithography and reactive ion etching with good selectivity and directionality and then we fabricate standard four-point-pr...

    Ashkan Behnam, Leila Noriega, Yongho Choi, Zhuangchun Wu… in MRS Online Proceedings Library (2007)

  6. No Access

    Article

    Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film-GaAs Schottky Contacts

    We experimentally study the dark and photocurrent in metal-semiconductor-metal (MSM) photodetectors based on single-walled carbon nanotube film Schottky contacts on GaAs. We find that above ~260°K, thermionic ...

    Jason L. Johnson, Ashkan Behnam, Yongho Choi… in MRS Online Proceedings Library (2008)

  7. No Access

    Article

    Growth and Characterization of GaN Nanowires for Hydrogen Sensors

    We report on the growth and characterization of high-quality GaN nanowires for hydrogen sensors. We grew the GaN nanowires by catalytic chemical vapor deposition (CVD) using gold thin films as a catalyst on a ...

    Jason L. Johnson, Yongho Choi, Ant Ural, Wantae Lim… in Journal of Electronic Materials (2009)

  8. No Access

    Article

    Ion Implanted SiO2 Substrates for Nucleating Silicon Oxide Nanowire Growth

    We experimentally demonstrate a simple and efficient approach for silicon oxide nanowire growth by implanting Fe+ ions into thermally grown SiO2 layers on Si wafers and subsequently annealing in argon and hydroge...

    Jason L. Johnson, Yongho Choi, Ant Ural in MRS Online Proceedings Library (2009)

  9. No Access

    Article

    Characterization of Graphene Gate Electrodes for Metal-Oxide-Semiconductor Devices

    We fabricate and characterize metal-oxide-semiconductor (MOS) devices with graphene as the gate electrode, 5 or 10 nm thick silicon dioxide as the insulator, and silicon as the semiconductor substrate. We find...

    Yanbin An, Aniruddh Shekhawat, Ashkan Behnam, Eric Pop, Ant Ural in MRS Advances (2017)