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Article
Experimental Study of Self-Diffusion in Silicon Using Isotopically Enriched Structures
Self-diffusion in silicon has been studied using epitaxially grown isotopically enriched structures under nonequilibrium concentrations of intrinsic point defects created by thermal oxidation and nitridation. ...
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Article
What Does Self-Diffusion Tell Us about Ultra Shallow Junctions?
Understand ing the coupling between native point defects and dopants at high concentrations in silicon will be key to ultra shallow junction formation in silicon technology. Other effects, such as transient en...
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Article
Carbon nanotube growth from nanoscale clusters formed by ion implantation
We have demonstrated that iron ions implanted into silicon dioxide thin films form nanoscale clusters which can act as catalyst for carbon nanotube growth. We have implanted iron ions with an energy of 60 keV ...
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Article
Micromachined Silicon Grids for Direct TEM Characterization of Carbon Nanotubes Grown by CVD
Transmission electron microscopy (TEM) is a key technique in the structural characterization of carbon nanotubes. For device applications, carbon nanotubes are typically grown by chemical vapor deposition (CVD...
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Article
Geometry Dependent Resistivity in Single-Walled Carbon Nanotube Films Patterned Down to Submicron Dimensions
We demonstrate patterning of SWNT films down to 200 nm lateral dimensions using e-beam lithography and reactive ion etching with good selectivity and directionality and then we fabricate standard four-point-pr...
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Article
Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film-GaAs Schottky Contacts
We experimentally study the dark and photocurrent in metal-semiconductor-metal (MSM) photodetectors based on single-walled carbon nanotube film Schottky contacts on GaAs. We find that above ~260°K, thermionic ...
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Article
Ion Implanted SiO2 Substrates for Nucleating Silicon Oxide Nanowire Growth
We experimentally demonstrate a simple and efficient approach for silicon oxide nanowire growth by implanting Fe+ ions into thermally grown SiO2 layers on Si wafers and subsequently annealing in argon and hydroge...
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Article
Characterization of Graphene Gate Electrodes for Metal-Oxide-Semiconductor Devices
We fabricate and characterize metal-oxide-semiconductor (MOS) devices with graphene as the gate electrode, 5 or 10 nm thick silicon dioxide as the insulator, and silicon as the semiconductor substrate. We find...