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    Study of silicon doped with zinc ions and annealed in oxygen

    The results of studies of the surface layer of silicon and the formation of precipitates in Czochralski n-Si (100) samples implanted with 64Zn+ ions with an energy of 50 keV and a dose of 5 × 1016 cm–2 at room te...

    V. V. Privezentsev, E. P. Kirilenko, A. N. Goryachev, A. A. Batrakov in Semiconductors (2017)