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Article
Non-Destructive Assessment Of Semiconductor Carrier Lifetime Using Photothermal Radiometry
Of crucial importance to all areas of the microelectronics industry is the characterisation of silicon wafer quality. An important indicator of this is carrier lifetime, and a convenient non-destructive method...
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Article
Silicon Nanoclusters in Silica: A Luminescence Study of Visible Light Emission from a Siliconbased Material
Considerable interest has been generated recently in the application of Porous Silicon to the production of light emitting devices, and a number of demonstration structures have been produced. However, the poo...
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Article
The Effect of Level Mixing in Er-Doped Si
We have studied the effect of level mixing on the optical properties of Er in Si by calculating the radiative cross sections of Er in Si under external pressure, and the possibility of enhancing in this way bo...
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Article
Investigation of Coupling Mechanism between Erbium (Er3+) and Ytterbium (Yb3+) in Alumina (A12O3) Host
Plasma-enhanced CVD (PECVD) deposited alumina (A12O3) thin films and single sapphire crystals were co-doped with both erbium and ytterbium using ion implantation. Yb3+ and Er3+ concentrations ranged from 2.4At% t...
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Article
Energy Transfer in Erbium-Doped Silicon Nanoclusters: A Comparison of Silicon-Rich Silica and Silicon Nanopowders
A number of groups have demonstrated an efficient excitation transfer mechanism in erbium-doped crystalline and porous silicon. It has been postulated that this is a carrier-mediated transfer, which points to ...
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Article
Rare-Earth Doped Silicon-Rich Silica: Evidence for Energy Transfer between Silicon Microclusters and Rare-Earth Ions
We report the fabrication of rare-earth doped silicon-rich silica thin films by PECVD. The films exhibit absorption edges in the visible region of the optical spectrum consistent with the presence of silicon m...