4 Result(s)
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Article
Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
Si delta-do** in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040. Si delta-do** concentration increases and then decr...
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Article
Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications
Semi-insulating undoped GaN films were grown based on controlling the size of the nucleation sites through a special two-step growth method: First, 16 nm LT-GaN was annealed at 950° with a ram** time of 4 mi...
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Article
Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
Si delta-do** in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040°C. Si delta-do** concentration increases and then de...
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Article
Characterization of immobilized DNA on sulfur-passivated InAs surfaces
The immobilization of DNA on passivated n-type InAs (100) surfaces has been studied using X-ray and ultraviolet photoelectron spectroscopy. The benefits of sulfur passivation using ammonium sulfide solution ((NH4
