3,082 Result(s)
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English
Materials Science
**-** Ren
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Chapter
Preparation of Nuclear Targets at the Institute of Atomic Energy
In this paper, the development of nuclear targets for nuclear reaction experiments in the Institute of Atomic Energy, Peking, China, is described. The techniques of vacuum evaporation, electroplating and isoto...
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Effect of ferrite and pearlite distribution on fracture toughness in nodular cast iron
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The influence of pearlite fraction on fracture toughness and fatigue crack growth in nodular cast iron
Fracture toughness and fatigue crack growth data of four nodular cast irons with different pearlite fractions are studied. The influence of temperature on fracture toughness is also investigated. Fracture surf...
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Defects in Superlattices Under Pressure
We report theoretical calculations of deep levels in GaAs/AlxGa1−xAs superlattices under hydrostatic pressure. We predict phase diagrams for DX centers: for a given composition x there is a function p(a), which r...
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Influences of grain size and precracking load on the critical stress intensity factor of mild steel
The effects of grain size and precracking load on the critical stress intensity factor are studied. A plane stress model of elastic-plastic stress distribution which includes the strain hardening effects is us...
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Study of improving the hot-cracking susceptibility of the nickel-iron electrode for welding cast iron
The nickel-iron electrode for welding cast iron is susceptible to hot cracking. In order to improve its hot-cracking susceptibility, the effects of rare earth (RE), C, Si, Cu, Mn, S, and P on its hot cracking ...
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An experimental investigation of deformationinduced heating during tensile testing
An experimental investigation of deformation heating during uniaxial tensile testing is presented for Armco interstitial-free steel (I. F. steel) and stainless steel type 310 (310SS). Temperature distributions...
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Growth of device quality GaAs by chemical beam epitaxy
The growth of high purity GaAS with excellent uniformity and very low defect density by chemical beam epitaxy using triethylgallium and arsine is described. The residual background impurity is mostly carbon. A...
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A theoretical analysis of the spinodal decomposition in Fe- C martensite during aging stage of tempering
A thermodynamic model of Fe-C martensite is proposed, which has a distinct physical meaning and is easily treated mathematically (high order derivation). When applying this model to the spinodal decomposition ...
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Material Properties of GaAs-on-Si and Fabrication of Digital Integrated Circuits
We have found that the surface morphology of GaAs grown on Si by MBE is smoother at lower growth temperatures (<500° C), but that the crystalline properties improve at higher growth temperatures (575-600°C). A...
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Material and Device Properties of 3” Diameter GaAs-on-Si with Buried P-type Layers
Two problems facing MOCVD grown GaAs-on-Si are firstly, scale up to 3” and greater wafer diameter with acceptably uniform layer thicknesses and electrical and optical properties, and secondly the achievement o...
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A Versatile Microwave Plasma Applicator
This paper describes a device used for the introduction of microwave energy into a plasma chamber over a wide area with hightransfer efficiency and good energy uniformity.
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Effect of copper on the strength of AISI 316 stainless steel
The load relaxation test was used to evaluate the elevated temperature (>0.4Tm) flow strength (as a function of strain rate and temperature) of a series of modified type AISI 316, austenitic stainless steels whic...
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Glass formation and glass structure of BiO1.5–CuO–Ca0.5Sr0.5O system
The glass-forming region of the BiO1.5–CuO–Ca0.5Sr0.5O system has been determined by melting 5 g batches. Glass rods 4 mm in diameter and 75 mm long have been made. The glass transition temperatures (TG) and the ...
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Deep Levels in Superlattices
The physics of deep levels in semiconductors is reviewed, with emphasis on the fact that all substitutional impurities produce deep levels - some of which may not lie within the fundamental band gap. The chara...
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Properties of Chlorine-Doped Zinc Selenide Grown by Molecular Beam Epitaxy
ZnSe:Cl epilayers have been grown on (100) GaAs by MBE using a Zn to Se beam flux ratio of 2:1 and substrate temperatures as low as 225°C. The ZnSe:Cl epilayers are highly conducting and exhibit bright blue-vi...
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Low-Pressure Chemical Vapor Deposition of Polycrystalline Silicon and Silicon Dioxide by Rapid Thermal Processing
Low-pressure chemical vapor deposition of polycrystalline silicon and silicon dioxide in a lamp-heated cold-wall rapid thermal processor have been investigated. Silicon dioxide films have been deposited by the...
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High 2Deg Mobility and Fabrication of High Performance AiGaAs/GaAs Selectively Doped Heterostructure Transistors and Ring Oscillators on Si Substrates
We report growth by MBE and fabrication of state-of-the-art AlGaAs/GaAs selectively doped heterostructure transistors (SDHT’s) and ring oscillators on Si substrates. In MBE growth, use of minimum As4/Ga flux rati...
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Structural and Electronic Relationships in the High-Temperature Copper-Based Superconductors
Atomic displacements from the ideal rock-salt positions in the Tl-, Bi-, and Pb-O layers of the Cu-based high-Tc super-conductors affect the electronic nature of these oxides. When distortions in the Bi-O layers ...
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Theory of the Normal State of Cuprate Superconductors
We propose a framework for the theory of the “normal” metallic state of the CuO2 planes of high Tc superconductors. This state is closely analogous to the known state of the one-dimensional Hubbard model, with sp...
