303 Result(s)
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English
Materials Science
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Article
Evidence for Shallow Acceptor Levels in MBE Grown GaN
We report the results of photoluminescence measurements on a number of GaN thin films grown by MBE on GaAs (111)B substrates. In particular, we draw attention to a new observation of a line at approximately 3....
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Article
Growth of GaN films on (001) and (111) GaAs surfaces by a modified MBE method
Films of GaN have been grown using a modified MBE method in which the active nitrogen is supplied from an RF activated plasma source. Wurtzite films grown on (0 0 1) oriented GaAs substrates show highly defect...
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Article
Metal Contact on Nitride Based Materials
Owing to their large band gaps and high dielectric constants, III-V nitrides are very attractive for high temperature electronics and optoelectronic device applications. Improved material properties have recen...
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300°C GaN/AlGaN Heterojunction Bipolar Transistor
A GaN/AlGaN heterojunction bipolar transistor has been fabricated using Cl2/Ar dry etching for mesa formation. As the hole concentration increases due to more efficient ionization of the Mg acceptors at elevated ...
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Growth and Device Performance of GaN Schottky Rectifiers
Undoped, 4µm thick GaN layers grown by Metal Organic Chemical Vapor Deposition were used for fabrication of high stand off voltage (356 V) Schottky diode rectifiers. The figure of merit VRB2/RON, where VRB is the...
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Article
Behavior of W and WSix Contact Metallization on n- and p- Type GaN
Sputter-deposited W-based contacts on p-GaN (NA∼1018 cm−3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of th...
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Article
Luminescence from Erbium-Doped Gallium Nitride Thin Films
The III-V nitride semiconductors appear to be excellent host materials for optical device applications involving thin films doped with rare earth atoms. In particular, GaN epilayers doped with Er ions have sho...
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Article
Photoelectrochemical Etching of InxGa1−xN
A comparison of KOH, NaOH and AZ400K solutions for UV photo-assisted etching of undoped and n+ GaN is discussed. The etching is diffusion-limited (Ea < 6kCal·mol−1) under all conditions and is significantly faste...
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Article
Intraband Electron Energy Relaxation in CdSe Quantum Dots is Dominated by Coulombic Coupling Between Electrons and Holes
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Article
Comparison of Implant Isolation Species for GaN Field-effect Transistor Structures
Different ions (Ti+, O+, Fe+, Cr+) were implanted at multiple energies into GaN field effect transistor structures (n and p-type). The implantation was found to create deep states with energy levels in the range ...
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Article
Surface Conversion Effects in Plasma-Damaged p-GaN
The near-surface (400-500Å) of p-GaN exposed to high density plasmas is found to become more compensated through the introduction of shallow donors. At high ion fluxes or ion energies there can be type-convers...
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Article
High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
The effects of dc chuck self-bias and high density source power (which predominantly control ion energy and ion flux, respectively) on the electrical properties of n-GaN Schottky diodes exposed to Inductively ...
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Article
Processing and Device Performance of GaN Power Rectifiers
Mesa and planar geometry GaN Schottky rectifiers were fabricated on 3-12µm thick epitaxial layers. In planar diodes utilizing resistive GaN, a reverse breakdown voltage of 3.1 kV was achieved in structures con...
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Article
Properties and Effects of Hydrogen in GaN
The status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojuncti...
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Article
Erratum to: Conductive percolation threshold of conductive-insulating granular composites
The Publisher apologizes for a mistake that occurred in JOURNAL OFMATERIALS SCIENCE, volume 41, number 7, pages 2157–2159. In the article “Conductive percolation threshold of conductive-insulating granular com...
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Article
Open AccessGrowth of Y-shaped Carbon Nanofibers from Ethanol Flames
Y-shaped carbon nanofibers as a multi-branched carbon nanostructure have potential applications in electronic devices. In this article, we report that several types of Y-shaped carbon nanofibers are obtained f...
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Article
Open AccessSynthesis of Organic Dye-Impregnated Silica Shell-Coated Iron Oxide Nanoparticles by a New Method
A new method for preparing magnetic iron oxide nanoparticles coated by organic dye-doped silica shell was developed in this article. Iron oxide nanoparticles were first coated with dye-impregnated silica shell...
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Article
Open AccessEffect of pH on the Interaction of Gold Nanoparticles with DNA and Application in the Detection of Human p53 Gene Mutation
Gold nanoparticles (GNPs) are widely used to detect DNA. We studied the effect of pH on the assembly/disassembly of single-stranded DNA functionalized GNPs. Based on the different binding affinities of DNA to ...
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Article
Open AccesspH-Sensitive Micelles Based on Double-Hydrophilic Poly(methylacrylic acid)-Poly(ethylene glycol)-Poly(methylacrylic acid) Triblock Copolymer
pH-sensitive micelles with hydrophilic core and hydrophilic corona were fabricated by self-assembling of triblock copolymer of poly(methylacrylic acid)-poly(ethylene glycol)-poly(methylacrylic acid) at lower s...
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Article
Open AccessSynthesis and purple-blue emission of antimony trioxide single-crystalline nanobelts with elliptical cross section
Single-crystalline orthorhombic antimony trioxide (Sb2O3) nanobelts with unique elliptical cross sections and purple-blue photoluminescence have been synthesized. The uniform Sb2O3 nanobelts are 400–600 nm in wid...
