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    An ANFIS Based Approach for Prediction of Threshold Voltage Degradation in Nanoscale DG MOSFET Devices

    Nowadays, the tremendous shrinking of electronic devices has reduced their sizes to very low scales. However, this process has been accompanied unavoidably with many well-recognized reliability challenges basi...

    Toufik Bentrcia, Fayçal Djeffal in Transactions on Engineering Technologies (2014)