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    Chapter and Conference Paper

    Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trap**

    Two-dimensional transient simulations of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that lag phenomena and current slu...

    A. Nakajima, K. Itagaki, K. Horio in Simulation of Semiconductor Processes and Devices 2007 (2007)