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    Field Dependence of Time-To-Breakdown Distribution of Thin Oxides

    The accurate prediction of thin insulator reliability is of significant importance to the development of MOS VLSI technologies. In most reliability studies1,5, the time-to-failure tbd and/or the total injected ch...

    P. Olivo, Thao N. Nguyen, B. Ricco in The Physics and Technology of Amorphous SiO2 (1988)