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M. Balkanski
Materials Science
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Chapter
Heteroepitaxy of Layered III–VI Semiconductor GaSe on Si(111)-7×7 Surface
The new concept of overlayer growth named van der Waals epitaxy (vdWE) emerged with the initial work of Koma [1], in which the constraints imposed by the lattice mismatch have been shown to be removed by using th...
